Comparison ledger
Lam Research 2300 Exelan, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 ExelanLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 | Oxford Instruments 100 ICP Fluorine |
| Cited variants | — | |
| Specifications | ||
| Configuration | FLEX 4CH[2] | — |
| Manufacturer | Lam Research[3] | — |
| Model | 2300 Exelan Flex[3] | — |
| Equipment type | Etch system[3] | — |
| Wafer size | 300 mm (12 inch)[3] | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
| Power | 208 VAC, 50/60 Hz[3] | — |
| Full load current | 56 A[3] | — |
| Main circuit breaker rating | 70 A[3] | — |
| Dielectric etch capability | Critical front-end HARC and SAC etch; backend in situ low-k dual damascene etch[4] | — |
| Technology node | Sub-65 nm applications[4] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
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