Comparison ledger
Lam Research 2300 Exelan Flex, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Exelan FlexLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Voltage | 208 VAC[2] | — |
| Configuration | 50/60 Hz[2] | — |
| Full Load Current | 56 A[2] | — |
| Main CB Current Rating | 70 A[2] | — |
| Wafer Size | 12 inch (300 mm)[3] | — |
| Frequency | 50/60 Hz[2] | — |
| Make | Lam[3] | — |
| Model | 2300 Exelan Flex[3] | — |
| Wafer Sizes | 12 inch[3] | — |
| Equipment type | Etch Chamber[3] | — |
| Power | 208 VAC, 50/60 Hz[2] | — |
| Vintage | 2006[2] | — |
| OEM | Lam[3] | — |
| Category | Etch[3] | — |
| Wafer size | 12 inch[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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