Comparison ledger
Lam Research 2300 Exelan Flex Dielectric, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Exelan Flex DielectricLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 Exelan Flex Dielectric | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Wafer size | 300mm[3] | — |
| ICP source frequency | 13.56MHz for Exelan HP; 60MHz for Flex variant[1] | — |
| Max ICP power (HP variant) | 3000W[1] | — |
| Technology node | sub-65nm for Flex variant; 90nm for HP variant[1] | — |
| Manufacturer | Lam Research[4] | — |
| Model | 2300 Exelan Flex[4] | — |
| Description | Dielectric Etch[4] | — |
| Version | 300 mm[4] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[2] |
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