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Comparison ledger

2300 Flex 45versus110

Lam Research 2300 Flex 45, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
2300 Flex 45Lam Research
110Tegal
OEMLam ResearchTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 2300Tegal 110
Cited variants—
Specifications
ConfigurationMetal HP MWS[2]—
3 ChambersInsulating Film / Metal / Ashing[2]—
MakeLam[2]—
Model2300 Flex 45[2]—
Equipment typeEtcher[2]—
Chambers3 chambers[2]—
Process coverageInsulating film / Metal / Ashing[2]—
Gases used for insulating filmC4F8, CF4, CH3F[2]—
Gases used for metalCl2, BCl3[2]—
TypeEtcher[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[4]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[4]
Physical description—compact[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com