Comparison ledger
Lam Research 590, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 590Lam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 590 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Voltage | 208V[2] | — |
| Wafer size | 6 inch[2] | — |
| RF frequency | 13.56 MHz[4] | — |
| Pressure | 2.8 Torr[4] | — |
| Gap | 0.38 cm[4] | — |
| Power (low) | 450 W[4] | — |
| Power (high) | 850 W[4] | — |
| OEM | Lam Research[2] | — |
| Model | 590[2] | — |
| Category | Etcher[2] | — |
| Power | 208V[2] | — |
| Plasma recipe entry | CF4+CHF3+He (90:30:120 sccm)[4] | — |
| Equipment type | Etcher[2] | — |
| Wafer sizes | 6 inch[2] | — |
| Electrical | 208V[2] | — |
| Process gas / plasma recipe reference | CF4+CHF3+He (90:30:120 sccm)[4] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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