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Lam Research

590

EtchLam Research 590 family
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Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

590 — Inventory photo
Fig. 01590Inventory photo[1]

Power

208V[1]

Vacuum

2.8 Torr[3]

Gas delivery

CF4+CHF3+He (90:30:120 sccm)[3]

What it is

General reference — not yet source-verified

The Lam Research 590 is an etcher used in semiconductor manufacturing. Etchers remove selected material from a wafer after a pattern has been defined by a masking layer. Plasma etchers use reactive gases and electric fields to drive material removal in dry processing steps.

How it works

General reference — not yet source-verified

Plasma etchers operate by creating a low pressure discharge from process gases inside a chamber. Reactive species formed in the plasma interact with exposed films on the wafer surface and convert them into removable products. Process results depend on gas chemistry, chamber conditions, power delivery, and the masking material that protects areas meant to remain.

Where it fits in the process flow

General reference — not yet source-verified

An etcher is typically used after a film has been deposited and patterned. A wafer commonly enters etch after lithography has defined openings in photoresist or another masking layer. A wafer commonly proceeds to resist removal, cleaning, inspection, or another deposition step after etch, depending on the integration flow.

Applications

General reference — not yet source-verified

Plasma etchers are used where dry pattern transfer is needed for films that must be removed selectively from exposed areas. Such tools are commonly applied to dielectric, nitride, polysilicon, metal, or resist related patterning tasks, depending on chamber design and chemistry.

What do the numbers mean?

Power & electrical5

Voltage
208V[1]
Accurate?
Voltage
208 V[2]
Accurate?
RF frequency
13.56 MHz[3]
Accurate?
Power
208V[1]
Accurate?
Electrical
208V[1]
Accurate?

Vacuum & pumping1

Pressure
2.8 Torr[3]
Accurate?

Wafer handling2

Wafer size
6 inch[1]
Accurate?
Wafer sizes
6 inch[1]
Accurate?

Gas & chemistry3

Plasma recipe entry
CF4+CHF3+He (90:30:120 sccm)[3]
Accurate?
Plasma recipe entry
SF6+He (175:50 sccm)[3]
Accurate?
Process gas / plasma recipe reference
CF4+CHF3+He (90:30:120 sccm)[3]
Accurate?

Configuration & options8

Gap
0.38 cm[3]
Accurate?
Power (low)
450 W[3]
Accurate?
Power (high)
850 W[3]
Accurate?
OEM
Lam Research[1]
Accurate?
Model
590[1]
Accurate?
Category
Etcher[1]
Accurate?
OEM
Lam[1]
Accurate?
Equipment type
Etcher[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Voltage208V[1]
  • Voltage208 V[2]
  • RF frequency13.56 MHz[3]
  • Pressure2.8 Torr[3]
  • Power208V[1]
  • Plasma recipe entryCF4+CHF3+He (90:30:120 sccm)[3]
  • Plasma recipe entrySF6+He (175:50 sccm)[3]
  • Electrical208V[1]
  • Process gas / plasma recipe referenceCF4+CHF3+He (90:30:120 sccm)[3]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What RF power levels are used on the Lam 590?

The Lam 590 has been used at 450W and 850W.[3]

What is the chamber pressure and electrode gap for the Lam 590?

The Lam 590 operates at a pressure of 2.8 Torr with an electrode gap of 0.38 cm.[3]

Not publicly documented

The following facts about the 590 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 590 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 590 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 590 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 590 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 590 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Inventory photo
  3. [3]nanocenter.umd.edu — nanocenter.umd.edunanocenter.umd.edu
  4. [4]Lam Research Autoetch 590 - Rebuilt Plasma Etcher — spwindustrial.comspwindustrial.com
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Last updated Oct 18, 2026.

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