Comparison ledger
Lam Research AutoEtch 480, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AutoEtch 480Lam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | Plasma etch | — |
| Introduced | 1981 | — |
| Production run | 1981– | — |
| Lifecycle | — | — |
| Lifecycle milestones | 1981 Product introduction · 1982 First system sold · 1982 First sale | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research AutoEtch 480 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Type | automated polysilicon plasma etcher[2] | — |
| Etch type | Plasma etch (polysilicon)[2] | — |
| Automation level | Automated[2] | — |
| Process | Polysilicon plasma etch[2] | — |
| Automation | Automated[2] | — |
| System type | in-line, cassette-to-cassette, fully automated, single wafer, planar etching system[3] | plasma etch system[4] |
| Process modes | PPE-Planar Plasma Etching; RIE-Reactive Ion Etching (optional)[3] | — |
| Throughput | 30-60 wafers/hour[3] | — |
| Wafer size | 3 in., 100mm, or 125mm[3] | — |
| Etch rate | greater than 3,000 A/min[3] | — |
| Uniformity | better than ± 5% across wafer[3] | — |
| RF power supply | 500 watts, automatically stabilized; 3.56 MHz, crystal controlled; 52 ohms output impedance[3] | — |
| Facility power | 208 VAC, 3 phase, 5 wire, 20 amps, 50/60 Hz[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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