Waferpedia

Comparison ledger

EDC-HL-23versusEDC-HL-8

Laurell EDC-HL-23, Laurell EDC-HL-8, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
EDC-HL-23Laurell
EDC-HL-8Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size150mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation650-series—
FamilyLaurell EDC-HL-23Laurell EDC-HL-8
Cited variants
  • EDC-HL-23 B650-series[1]
Specifications
Process controller650-series process controller[1]—
Wafer capacityUp to 150 mm wafers[1]Up to 200mm wafers[2]
Substrate capacityUp to 5 in x 5 in (127 mm x 127 mm) substrates[1]Up to 7" × 7" (178mm × 178mm) substrates[2]
Maximum rotation capability12,000 RPM with vacuum hold-down[1]—
Recommended operating speed3,000 RPM with non-vacuum chucks[1]3,000 RPM and non-vacuum chucks[2]
Power95 to 240 VAC, 47/63 Hz, ~300 Watts[1]95 to 240 VAC, 47/63 HZ, ~300 Watts[2]
Nitrogen/CDA seal purge pressure60–70 PSIG (4–5 bar)[1]—
Vacuum recommendation25–28 inches Hg with 4.5 SCFM at 0 inches Hg[1]—
ModelEDC-HL-23[1]—
OEMLaurell Technologies[1]—
CategorySpin Coater[1]—
Series650-series EDC system[1]650-series EDC system[2]
Maximum speed capability12,000 RPM with vacuum hold-down[1]12,000 RPM with vacuum hold-down[2]
Recommended speed3,000 RPM[1]3,000 RPM with non-vacuum chucks[2]
Recommended chuck typeNon-vacuum chucks[1]—
Supported processesEtch, develop, clean[1]—
Maximum wafer size—up to 200 mm[2]
Maximum substrate size—7 in × 7 in (178 mm × 178 mm)[2]
Nitrogen/CDA pressure—60–70 PSIG (4–5 bar)[2]
Vacuum requirement—25–28 inches Hg; 4.5 SCFM at 0 inches Hg[2]
Product line—650-series EDC Spin Processor[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org