Comparison ledger
Mattson 2800 RTP, Varian 0332 F 9453 302 Diffusion, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2800 RTPMattson | |
|---|---|---|
| OEM | Mattson | Varian |
| Category | Thermal / Diffusion | Thermal / Diffusion |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Mattson 2800 RTP | Varian 0332 F 9453 302 Diffusion |
| Cited variants |
| — |
| Specifications | ||
| Configuration | ATM-307-S-CE Robot[2] | — |
| Type | Rapid Thermal Process (RTP) system[2] | — |
| Model | 2800[2] | 0332 F 9453 302[5] |
| Make | Mattson[2] | Varian[5] |
| Dual-side heating | For high ramp rates[3] | — |
| Independent lamp control | Improved temperature uniformity across wafer[3] | — |
| Dynamic individual lamp adjustment | Available in any step for excellent uniformity during all process steps[3] | — |
| OPUS simulation model | For easy uniformity optimization with small number of test wafers[3] | — |
| Pyrogenic ambient control | For thicker oxides at lower temperatures and reduced thermal stress[3] | — |
| Optimized tube purge | <10 sec[3] | — |
| Throughput | 30% increased throughput[3] | — |
| Footprint | Small footprint[3] | — |
| Uptime | High uptime[3] | — |
| Manufacturer | Mattson[2] | — |
| Equipment type | Rapid Thermal Process (RTP) system[2] | — |
| Category | Thermal / Diffusion[4] | Thermal / Diffusion[7] |
| Description | workhorse tool for mainstream RTP applications[3] | — |
| Heating approach | dual-side heating[3] | — |
| Lamp control | independent lamp control[3] | — |
| Lamp adjustment | dynamic individual lamp adjustment in any step[3] | — |
| Ambient control | pyrogenic ambient control[3] | — |
| Tube purge | optimized tube purge (<10 sec)[3] | — |
| Applications | silicide/barrier formation; BPSG reflow and densification; shallow junction formation; implant annealing; poly emitter drive-in; thin gate dielectrics; RTO, RTN and RTON process; new gate dielectrics; thermal donor annihilation; multilayer annealing for metallization; solar cells; ferroelectrics (e.g. PZT)[3] | — |
| Asset Number | — | 142841[5] |
| Last Confirm Date | — | October 14, 2025[6] |
| Tool type | — | diffusion pump[7] |
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