Mattson

The Mattson 2800 RTP system uses dual-side heating for high ramp rates. The Mattson 2800 RTP system uses independent lamp control for improved temperature uniformity across the wafer. The Mattson 2800 RTP system supports dynamic individual lamp adjustment in any step for uniformity during process steps. The Mattson 2800 RTP system includes an ATM-307-S-CE robot, an ESC-200 controller, a Pre 201 aligner, an ESC-201 controller, a pneumatic rack, and an EMO power supply. The Mattson 2800 RTP system includes pyrogenic ambient control to form thicker oxides at lower temperatures with reduced thermal stress. The Mattson 2800 RTP system includes an optimized tube purge of less than 10 seconds.[1][2]
The Mattson 2800 RTP system is used for silicide and barrier formation. The Mattson 2800 RTP system is used for BPSG reflow and densification. The Mattson 2800 RTP system is used for shallow junction formation and implant annealing. The Mattson 2800 RTP system is used for poly emitter drive in. The Mattson 2800 RTP system is used for thin gate dielectrics. The Mattson 2800 RTP system is used for RTO, RTN, and RTON processes. The Mattson 2800 RTP system is used for new gate dielectrics. The Mattson 2800 RTP system is used for thermal donor annihilation. The Mattson 2800 RTP system is used for multilayer annealing for metallization. The Mattson 2800 RTP system is used for solar cells and ferroelectrics such as PZT.[2]
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| AST 2800 RTP | — | — | Model designation is AST 2800. | waferpedia.com[4] |
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The Mattson 2800 RTP is a rapid thermal process system.[1][2]
The Mattson 2800 RTP system uses dual-side heating for high ramp rates.[2]
The Mattson 2800 RTP system uses independent lamp control for improved temperature uniformity across the wafer. The Mattson 2800 RTP system also supports dynamic individual lamp adjustment in any step for uniformity during process steps.[2]
The Mattson 2800 RTP system is used for silicide and barrier formation, BPSG reflow and densification, shallow junction formation, implant annealing, poly emitter drive in, thin gate dielectrics, RTO, RTN and RTON process, new gate dielectrics, thermal donor annihilation, multilayer annealing for metallization, solar cells, and ferroelectrics such as PZT.[2]
The following facts about the 2800 RTP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 2800 RTP are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the 2800 RTP are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 2800 RTP are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 2800 RTP is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the 2800 RTP are on record.
Answerable by: an OEM parts catalog or a service engineer
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Last updated Oct 20, 2026.
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