Comparison ledger
Oxford Instruments Ionfab 300 Plus IBD IBE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Ionfab 300 Plus IBD IBEOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Ionfab 300 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Phase | 3 Phase[2] | — |
| Configuration | Loadlock and robot with secondary pumping, Vacuum can remain inside for higher throughput.[2] | — |
| Process type | Ion beam deposition / ion beam etching[3] | — |
| Wafer size | 6 to 8 inch wafers[3] | — |
| Power & electrical | 3 phase[3] | — |
| Vacuum & pumping | Loadlock and robot with secondary pumping; vacuum can remain inside for higher throughput[3] | — |
| Configuration / options | Able to add another chamber if necessary[2] | — |
| Analytical feature | SIMS mass spectrometry[2] | — |
| Manufacturer | Oxford Instruments[2] | — |
| Model | Ionfab 300 Plus[2] | — |
| Vacuum / throughput | Vacuum can remain inside for higher throughput[3] | — |
| Configuration option | Able to add another chamber if necessary[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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