Comparison ledger
Oxford Instruments Plasmalab 180 ICP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 180 ICPOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | For parts[2] | — |
| Process type | ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[3] | — |
| System type | Load-locked plasma etching system with ICP source[3] | plasma etch system[4] |
| Operation | Fully automatic computer-controlled operation[3] | — |
| Maximum substrate size | 150 mm[3] | — |
| Configured substrate size | 100 mm wafers[3] | — |
| Wafer clamping | Mechanical clamping[3] | — |
| Backside cooling | Helium cooling[3] | — |
| Vacuum system | Alcatel turbo pump with controller and roughing pump[3] | — |
| Gas box | Six MFC gas controllers[3] | — |
| Previously used process gases | CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[3] | — |
| Electrical rating | 208V, 3-phase, 50/60 Hz[3] | — |
| Control | Computer control with fully automatic operation[3] | — |
| Current wafer configuration | 100 mm wafers[3] | — |
| Chuck type | Mechanical clamping[3] | — |
| Cooling | Backside helium cooling[3] | — |
| Pump | Alcatel turbo pump with controller and roughing pump[3] | — |
| Previously used gases | CHF3/CHF4, C3F8, C4F8, Argon, Oxygen, Hydrogen, Chlorine[3] | — |
| Power | 208V, 3 Ph, 50/60 Hz[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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