Comparison ledger
Oxford Instruments Plasmalab 800 Plus RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 800 Plus RIEOxford Instruments | 110Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab 800 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | LEP Tungsten[2] | — |
| Type | Reactive Ion Etching (RIE) System[3] | — |
| Controller | PC controller[4] | — |
| Footprint design | All electronics and vacuum components located within the tool body to minimize footprint[4] | — |
| OEM | Oxford Instruments[2] | — |
| Model | Plasmalab 800 Plus RIE[2] | — |
| Equipment type | Reactive Ion Etcher[2] | — |
| Category | RIE[3] | — |
| PC controller | Provides intuitive user interaction with the system via advanced graphics and process recipe pages[4] | — |
| MFC gas controllers | Four MFC gas controllers[4] | — |
| Gases | O2, CF4, Ar, CHF3[4] | — |
| Electrode diameter | 460 mm[4] | — |
| Top electrode diameter | 18.75 in.[4] | — |
| Top electrode gas delivery | Shower head gas delivery[4] | — |
| Vacuum system | Turbo pump and dry pump[4] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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