Comparison ledger
Plasma-Therm 790 RIE-PECVD, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 790 RIE-PECVDPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Unaxis 790 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Single Chamber[2] | — |
| Right chamber | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[3] | — |
| Left chamber | Cl2 (20sccm), HBr (100sccm),[3] | — |
| Compatible Materials | Si (to etch with Cr mask, use the ORANGE RIE batchtop), TMDs, and Graphene[3] | — |
| Incompatible Materials | III-V / Hi K / Metal[3] | — |
| Voltage | 208V, 3 Phase[5] | — |
| Wafer sizes | 2, 3, 4, 5, 6, 8, 12 inch[3] | — |
| Chamber configuration | Single chamber[2] | — |
| Process gas supply (right chamber) | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[3] | — |
| Process gas supply (left chamber) | Cl2 (20sccm), HBr (100sccm), O2 (20sccm), CF4 (50sccm), He (100sccm)[3] | — |
| Turbo pump base pressure | 10-5 Torr[3] | — |
| RF frequency | 13.56 MHz[4] | — |
| Electrical input | 200-220 Vac[4] | — |
| Number of process gases | 6[4] | — |
| Feature plate | Blank anodized aluminum[4] | — |
| Turbo pump capacity | 360 lps[4] | — |
| Electrode size | Dual 11 inch[5] | — |
| Voltage/phase | 208V, 3 phase[5] | — |
| Compatible materials | Si (with Cr mask), TMDs, Graphene[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[9] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[9] |
| Physical description | — | compact[1] |
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