Comparison ledger
Plasma-Therm SLR 770 RIE, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SLR 770 RIEPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm SLR 770 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Voltage | 208 V[2] | — |
| Frequency | 60 Hz[2] | — |
| Configuration | RF power supply has a water leak[2] | — |
| Process capabilities per chamber | RIE or PE adjustable[3] | — |
| Top electrode gap | Adjustable[3] | — |
| Pumping | TMP turbo pumps[3] | — |
| Gas lines per chamber | 8 gas lines and MFCs[3] | — |
| Maximum wafer size | up to 8 inch wafers[4] | — |
| Electrical | 208 V - 60 Hz[2] | — |
| Vintage | 1994 Vintage[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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