Comparison ledger
Plasma-Therm Unaxis ICP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Unaxis ICPPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | Wafer auto load/unload | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Unaxis ICP | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Gas Box:[2] | — |
| Gas 1 | UFC 1660, Cl2, 100 sccm, +/- 3% accuracy[2] | — |
| Gas 2 | MKS 1479, HBr, 100 sccm, +/- 3% accuracy[2] | — |
| Gas 3 | MKS 1479, SF6, 100 sccm, +/- 3% accuracy[2] | — |
| Gas 4 | UFC 8100, BCl3, 100 sccm 3%, +/- 3% accuracy[2] | — |
| Gas 5 | MKS 1479, O2, 20 sccm 3%, +/- 3% accuracy[2] | — |
| Gas 6 | MKS 1479, He, 20 sccm 3%, +/-3% accuracy[2] | — |
| Gas 7 | UFC 1660, Ar, 100 sccm 3%, +/- 3% accuracy[2] | — |
| Gas 8 | MKS 1479, N2, 20 sccm 3%, +/- 3% accuracy[2] | — |
| Wafer size | Wafer auto load/unload[2] | — |
| Temperature | Watlow 988 Chamber Chuck Temperature Control: (20-300°C) +/- 1°C[2] | — |
| Generator | ENI ACG 6 B[2] | — |
| Pressure Control Range | 100 mTorr[2] | — |
| VAT Valve Control | PM 5[2] | — |
| Turbo Pump Limit Vacuum | 5.0 E-6 Torr[2] | — |
| Tool type | Inductively Coupled Plasma (ICP) etcher[3] | — |
| Wafer sizes | 2, 3, 4, 6, 8 inch[2] | — |
| Chamber | Wafer auto load/unload[2] | — |
| Chamber chuck temperature control | Watlow 988, 20-300°C, +/- 1°C[2] | — |
| RF system generator | ENI ACG 6 B[2] | — |
| Pressure gauge | MKS 627 vacuum gauge[2] | — |
| Within Wafer (4") InP (1.5 um) | +/- 3 uniformity[2] | — |
| Wafer to Wafer (4") InP (1.5 um) | +/- 3 uniformity[2] | — |
| Wafer handling | Wafer auto load/unload[3] | — |
| Turbo pump system | Leybold MAG 900 CT turbo pump, Leybold D 65 BCS, Leybold MAG Drive 1000 control unit[2] | — |
| Control valve | VAT PM 5[2] | — |
| Within-wafer etch uniformity | Within Wafer (4") InP (1.5 um): +/- 3 uniformity[2] | — |
| Wafer-to-wafer etch uniformity | Wafer to Wafer (4") InP (1.5 um): +/- 3 uniformity[2] | — |
| Category | Etch[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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