Plasma-Therm
The Plasma-Therm Unaxis ICP is an inductively coupled plasma etcher. The Plasma-Therm Unaxis ICP supports wafer sizes of 2, 3, 4, 6, and 8 inch. The Plasma-Therm Unaxis ICP includes wafer auto load/unload.[1]

The Plasma-Therm Unaxis ICP is configured with a gas box carrying Cl2, HBr, SF6, BCl3, O2, He, Ar, and N2. The Plasma-Therm Unaxis ICP uses an ENI ACG 6 B generator in its RF system. The Plasma-Therm Unaxis ICP uses an MKS 627 vacuum gauge for pressure control. The Plasma-Therm Unaxis ICP specifies a pressure control range of 100 mTorr. The Plasma-Therm Unaxis ICP uses a VAT PM 5 control valve. The Plasma-Therm Unaxis ICP specifies a turbo pump limit vacuum of 5.0 E-6 Torr. The Plasma-Therm Unaxis ICP uses a Leybold MAG 900 CT turbo pump, a Leybold D 65 BCS pump, and a Leybold MAG Drive 1000 control unit. The Plasma-Therm Unaxis ICP includes Watlow 988 chamber chuck temperature control from 20 to 300°C with ±1°C control.[1][2]
Dry etch tools are used after a pattern has been formed on a masking layer and before later cleaning, inspection, or additional deposition steps. ICP etchers sit in the pattern transfer portion of the process flow, where they open or shape films by removing exposed material while protected areas remain. ICP etchers are used in both development work and production-like process modules where repeatable plasma conditions are important.
The Plasma-Therm Unaxis ICP is configured with gases that include chlorine, bromine, fluorine, oxygen, helium, argon, and nitrogen process lines. The Plasma-Therm Unaxis ICP reports within-wafer uniformity for a 4 inch InP etch of 1.5 um at ±3 uniformity. The Plasma-Therm Unaxis ICP reports wafer-to-wafer uniformity for a 4 inch InP etch of 1.5 um at ±3 uniformity.[1][2]
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The Plasma-Therm Unaxis ICP supports 2, 3, 4, 6, and 8 inch wafers.[1][3][2]
The Plasma-Therm Unaxis ICP includes wafer auto load and unload.[1][3][2]
The Plasma-Therm Unaxis ICP is configured with Cl2, HBr, SF6, BCl3, O2, He, Ar, and N2.[1][2]
The Plasma-Therm Unaxis ICP uses Watlow 988 chamber chuck temperature control from 20 to 300°C with ±1°C control.[1][2]
The Plasma-Therm Unaxis ICP uses an MKS 627 vacuum gauge, a VAT PM 5 control valve, a Leybold MAG 900 CT turbo pump, a Leybold D 65 BCS pump, and a Leybold MAG Drive 1000 control unit. The Plasma-Therm Unaxis ICP specifies a turbo pump limit vacuum of 5.0 E-6 Torr.[1][2]
The following facts about the Unaxis ICP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Unaxis ICP are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Unaxis ICP are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Unaxis ICP are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Unaxis ICP are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Unaxis ICP is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 19, 2026.
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