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Plasma-Therm

Unaxis ICP

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The Plasma-Therm Unaxis ICP is an inductively coupled plasma etcher. The Plasma-Therm Unaxis ICP supports wafer sizes of 2, 3, 4, 6, and 8 inch. The Plasma-Therm Unaxis ICP includes wafer auto load/unload.[1]

Unaxis ICP — Inventory photo
Fig. 01Unaxis ICPInventory photo[1]

Wafer size

Wafer auto load/unload

Power

RF System:[1]

Vacuum

Pressure Control:[1]

Gas delivery

Gas Box:[1]

What it is

The Plasma-Therm Unaxis ICP is an inductively coupled plasma etcher. The Plasma-Therm Unaxis ICP supports wafer sizes of 2, 3, 4, 6, and 8 inch wafers. The Plasma-Therm Unaxis ICP includes wafer auto load and unload.[1][3][2]

How it works

The Plasma-Therm Unaxis ICP is configured with a gas box carrying Cl2, HBr, SF6, BCl3, O2, He, Ar, and N2. The Plasma-Therm Unaxis ICP uses an ENI ACG 6 B generator in its RF system. The Plasma-Therm Unaxis ICP uses an MKS 627 vacuum gauge for pressure control. The Plasma-Therm Unaxis ICP specifies a pressure control range of 100 mTorr. The Plasma-Therm Unaxis ICP uses a VAT PM 5 control valve. The Plasma-Therm Unaxis ICP specifies a turbo pump limit vacuum of 5.0 E-6 Torr. The Plasma-Therm Unaxis ICP uses a Leybold MAG 900 CT turbo pump, a Leybold D 65 BCS pump, and a Leybold MAG Drive 1000 control unit. The Plasma-Therm Unaxis ICP includes Watlow 988 chamber chuck temperature control from 20 to 300°C with ±1°C control.[1][2]

Where it fits in the process flow

General reference — not yet source-verified

Dry etch tools are used after a pattern has been formed on a masking layer and before later cleaning, inspection, or additional deposition steps. ICP etchers sit in the pattern transfer portion of the process flow, where they open or shape films by removing exposed material while protected areas remain. ICP etchers are used in both development work and production-like process modules where repeatable plasma conditions are important.

Applications

The Plasma-Therm Unaxis ICP is configured with gases that include chlorine, bromine, fluorine, oxygen, helium, argon, and nitrogen process lines. The Plasma-Therm Unaxis ICP reports within-wafer uniformity for a 4 inch InP etch of 1.5 um at ±3 uniformity. The Plasma-Therm Unaxis ICP reports wafer-to-wafer uniformity for a 4 inch InP etch of 1.5 um at ±3 uniformity.[1][2]

What do the numbers mean?

Power & electrical3

RF System:[1]
Accurate?
Generator
ENI ACG 6 B[1]
Accurate?
RF system generator
ENI ACG 6 B[1]
Accurate?

Vacuum & pumping6

Pressure Control:[1]
Accurate?
MKS 627 Vacuum Gauge[1]
Accurate?
Pressure Control Range
100 mTorr[1]
Accurate?
Turbo Pump Limit Vacuum
5.0 E-6 Torr[1]
Accurate?
Pressure gauge
MKS 627 vacuum gauge[1]
Accurate?
Turbo pump system
Leybold MAG 900 CT turbo pump, Leybold D 65 BCS, Leybold MAG Drive 1000 control unit[1]
Accurate?

Wafer handling12

Wafer size
Wafer auto load/unload[1]
Accurate?
Temperature
Watlow 988 Chamber Chuck Temperature Control: (20-300°C) +/- 1°C[1]
Accurate?
Wafer sizes
2, 3, 4, 6, 8 inch[1]
Accurate?
Chamber
Wafer auto load/unload[1]
Accurate?
Chamber chuck temperature control
Watlow 988, 20-300°C, +/- 1°C[1]
Accurate?
Within Wafer (4") InP (1.5 um)
+/- 3 uniformity[1]
Accurate?
Wafer to Wafer (4") InP (1.5 um)
+/- 3 uniformity[1]
Accurate?
Wafer handling
Wafer auto load/unload[2]
Accurate?
Wafer sizes
2, 3, 4, 6, and 8 inch[2]
Accurate?
Chamber chuck temperature control
20-300°C, +/- 1°C[1]
Accurate?
Within-wafer etch uniformity
Within Wafer (4") InP (1.5 um): +/- 3 uniformity[1]
Accurate?
Wafer-to-wafer etch uniformity
Wafer to Wafer (4") InP (1.5 um): +/- 3 uniformity[1]
Accurate?

Gas & chemistry14

Gas Box:[1]
Accurate?
Gas 1
UFC 1660, Cl2, 100 sccm, +/- 3% accuracy[1]
Accurate?
Gas 2
MKS 1479, HBr, 100 sccm, +/- 3% accuracy[1]
Accurate?
Gas 3
MKS 1479, SF6, 100 sccm, +/- 3% accuracy[1]
Accurate?
Gas 4
UFC 8100, BCl3, 100 sccm 3%, +/- 3% accuracy[1]
Accurate?
Gas 5
MKS 1479, O2, 20 sccm 3%, +/- 3% accuracy[1]
Accurate?
Gas 6
MKS 1479, He, 20 sccm 3%, +/-3% accuracy[1]
Accurate?
Gas 7
UFC 1660, Ar, 100 sccm 3%, +/- 3% accuracy[1]
Accurate?
Gas 8
MKS 1479, N2, 20 sccm 3%, +/- 3% accuracy[1]
Accurate?
Gas 4
UFC 8100, BCl3, 100 sccm, +/- 3% accuracy[1]
Accurate?
Gas 5
MKS 1479, O2, 20 sccm, +/- 3% accuracy[1]
Accurate?
Gas 6
MKS 1479, He, 20 sccm, +/- 3% accuracy[1]
Accurate?
Gas 7
UFC 1660, Ar, 100 sccm, +/- 3% accuracy[1]
Accurate?
Gas 8
MKS 1479, N2, 20 sccm, +/- 3% accuracy[1]
Accurate?

Control & software3

Control Valve (VAT):[1]
Accurate?
VAT Valve Control
PM 5[1]
Accurate?
Control valve
VAT PM 5[1]
Accurate?

Configuration & options3

Chamber:[1]
Accurate?
Tool type
Inductively Coupled Plasma (ICP) etcher[2]
Accurate?
Category
Etch[2]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ConfigurationGas Box:[1]
  • Gas 1UFC 1660, Cl2, 100 sccm, +/- 3% accuracy[1]
  • Gas 2MKS 1479, HBr, 100 sccm, +/- 3% accuracy[1]
  • Gas 3MKS 1479, SF6, 100 sccm, +/- 3% accuracy[1]
  • Gas 4UFC 8100, BCl3, 100 sccm 3%, +/- 3% accuracy[1]
  • Gas 5MKS 1479, O2, 20 sccm 3%, +/- 3% accuracy[1]
  • Gas 6MKS 1479, He, 20 sccm 3%, +/-3% accuracy[1]
  • Gas 7UFC 1660, Ar, 100 sccm 3%, +/- 3% accuracy[1]
  • Gas 8MKS 1479, N2, 20 sccm 3%, +/- 3% accuracy[1]
  • ConfigurationRF System:[1]
  • GeneratorENI ACG 6 B[1]
  • ConfigurationPressure Control:[1]
  • ConfigurationMKS 627 Vacuum Gauge[1]
  • Pressure Control Range100 mTorr[1]
  • Turbo Pump Limit Vacuum5.0 E-6 Torr[1]
  • RF system generatorENI ACG 6 B[1]
  • Pressure gaugeMKS 627 vacuum gauge[1]
  • Gas 4UFC 8100, BCl3, 100 sccm, +/- 3% accuracy[1]
  • Gas 5MKS 1479, O2, 20 sccm, +/- 3% accuracy[1]
  • Gas 6MKS 1479, He, 20 sccm, +/- 3% accuracy[1]
  • Gas 7UFC 1660, Ar, 100 sccm, +/- 3% accuracy[1]
  • Gas 8MKS 1479, N2, 20 sccm, +/- 3% accuracy[1]
  • Turbo pump systemLeybold MAG 900 CT turbo pump, Leybold D 65 BCS, Leybold MAG Drive 1000 control unit[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What wafer sizes does the Plasma-Therm Unaxis ICP support?

The Plasma-Therm Unaxis ICP supports 2, 3, 4, 6, and 8 inch wafers.[1][3][2]

Does the Plasma-Therm Unaxis ICP include wafer auto load and unload?

The Plasma-Therm Unaxis ICP includes wafer auto load and unload.[1][3][2]

What process gases are configured on the Plasma-Therm Unaxis ICP?

The Plasma-Therm Unaxis ICP is configured with Cl2, HBr, SF6, BCl3, O2, He, Ar, and N2.[1][2]

What chamber chuck temperature control is specified for the Plasma-Therm Unaxis ICP?

The Plasma-Therm Unaxis ICP uses Watlow 988 chamber chuck temperature control from 20 to 300°C with ±1°C control.[1][2]

What vacuum and pumping components are specified for the Plasma-Therm Unaxis ICP?

The Plasma-Therm Unaxis ICP uses an MKS 627 vacuum gauge, a VAT PM 5 control valve, a Leybold MAG 900 CT turbo pump, a Leybold D 65 BCS pump, and a Leybold MAG Drive 1000 control unit. The Plasma-Therm Unaxis ICP specifies a turbo pump limit vacuum of 5.0 E-6 Torr.[1][2]

Not publicly documented

The following facts about the Unaxis ICP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Unaxis ICP are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Unaxis ICP are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Unaxis ICP are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Unaxis ICP are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Unaxis ICP is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]waferpedia.com — waferpedia.comwaferpedia.com
  3. [3]Plasma-Therm Unaxis ICP family | Waferpedia — waferpedia.comwaferpedia.com
  4. [4]Process Group Internships - UCSB Nanofab Wiki — wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
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Last updated Oct 19, 2026.

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