Waferpedia

Comparison ledger

Unaxis ICPversus1512e

Plasma-Therm Unaxis ICP, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Unaxis ICPPlasma-Therm
1512eTegal
OEMPlasma-ThermTegal
CategoryEtchEtch
Wafer sizeWafer auto load/unload—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyPlasma-Therm Unaxis ICPTegal 1512e
Specifications
ConfigurationGas Box:[1]—
Gas 1UFC 1660, Cl2, 100 sccm, +/- 3% accuracy[1]—
Gas 2MKS 1479, HBr, 100 sccm, +/- 3% accuracy[1]—
Gas 3MKS 1479, SF6, 100 sccm, +/- 3% accuracy[1]—
Gas 4UFC 8100, BCl3, 100 sccm 3%, +/- 3% accuracy[1]—
Gas 5MKS 1479, O2, 20 sccm 3%, +/- 3% accuracy[1]—
Gas 6MKS 1479, He, 20 sccm 3%, +/-3% accuracy[1]—
Gas 7UFC 1660, Ar, 100 sccm 3%, +/- 3% accuracy[1]—
Gas 8MKS 1479, N2, 20 sccm 3%, +/- 3% accuracy[1]—
Wafer sizeWafer auto load/unload[1]—
TemperatureWatlow 988 Chamber Chuck Temperature Control: (20-300°C) +/- 1°C[1]—
GeneratorENI ACG 6 B[1]—
Pressure Control Range100 mTorr[1]—
VAT Valve ControlPM 5[1]—
Turbo Pump Limit Vacuum5.0 E-6 Torr[1]—
Tool type—Industrial RIE plasma etcher system[2]
Stated configuration—With modules assembly for CI-4222[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com