Comparison ledger
Plasma-Therm Versaline VLN ICP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Versaline VLN ICPPlasma-Therm | 110Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | Brooks TM (Transfer Module) with four Wafer Manual Load Lock | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Versaline | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Manual Load Lock for Single or Multiple Wafers[2] | — |
| Voltage | 208V, 60 Hz, 3 phase[2] | — |
| Wafer size | Brooks TM (Transfer Module) with four Wafer Manual Load Lock[3] | — |
| Manufacturer | Plasma-Therm[2] | — |
| Model | Versaline VLN ICP[2] | — |
| Category | Etch[4] | — |
| Process type | Inductively coupled plasma[2] | — |
| Wafer handling | Manual load lock for single or multiple wafers[2] | — |
| Chamber | Single ICP chamber[3] | — |
| RF power supply 1 | ENI ACG-6B RF Power Supply – 600W @ 13.56MHz with Seren AT6NVL Matchwork & MC2 Tunner[2] | — |
| RF power supply 2 | ENI GMW-25A RF Power Supply – 2500W @2.0MHz with Seren AT25NVL Matchwork & MC2 Tunner[2] | — |
| Pressure controller | VAT PM5 Pressure Controller with Leybold Turbo pump[3] | — |
| Turbo pump | Seiko Seiki 1303CV Turbo Pump with Seiko Seiki SCU 750 controller[3] | — |
| Gas handling | (5) MFCs-gas with Isolation, Process and By-pass valves[2] | — |
| Backside cooling | He Backside Cooling[2] | — |
| Chamber heater | Watlow chamber heater and controller[2] | — |
| Control software | Windows Based OS[2] | — |
| Electrical | 208V, 60 Hz, 3 phase[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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