Comparison ledger
PVA TePla GigaBatch, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | GigaBatchPVA TePla | 110Tegal |
|---|---|---|
| OEM | PVA TePla | Tegal |
| Category | Etch | Etch |
| Wafer size | 75 mm to 100 mm | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | PVA TePla GigaBatch | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Plasma type | High frequency plasma[3] | — |
| Plasma frequency | 2.45 GHz[3] | — |
| Plasma power | 200 to 600 W[3] | — |
| Gas | O2[3] | — |
| O2 maximum flow | 1000 ml/min[3] | — |
| Primary vacuum chamber | Quartz primary vacuum chamber[3] | — |
| Primary vacuum chamber dimensions | D int. 245 mm x Prof. 380 mm[3] | — |
| Wafer capacity | 25 wafers[3] | — |
| Wafer size range | 75 mm to 100 mm[3] | — |
| Plasma power range | 200 to 600 W[3] | — |
| Process gas | O₂ (max flow 1000 ml/min)[3] | — |
| Chamber material | Quartz[3] | — |
| Chamber inner diameter | 245 mm[3] | — |
| Chamber depth | 380 mm[3] | — |
| Supported wafer sizes | 75 mm to 100 mm[3] | — |
| Uniformity | 20% to 30% depending on process time[3] | — |
| Positive resist etch rate (high power) | 250 nm/min to 1.2 µm/min[3] | — |
| Positive resist etch rate (low power) | 100 nm/min to 500 nm/min[3] | — |
| Vacuum chamber material | Quartz[3] | — |
| Chamber diameter | 245 mm (GIGAbatch 360); 300 mm (GIGAbatch 380M)[1] | — |
| Wafer batch size | Up to 25 wafers per run (75-100 mm)[3] | — |
| Substrate handling | 2" to 8" wafers (GIGAbatch 360/380M)[1] | — |
| Dimensions (w/h/d) | Approx. 795 x 1540 x 710 mm[1] | — |
| Weight | 190 kg[1] | — |
| Power range | 200 to 600 W[3] | — |
| Chamber dimensions (internal) | Diameter 245 mm, Depth 380 mm[3] | — |
| Process pressure | 0.5 to 0.8 mbar[3] | — |
| Chamber | Quartz primary vacuum chamber, D int. 245 mm x Prof. 380 mm[3] | — |
| Process time (High Power) | 1 min to 30 min (PR_Strip_High_xx)[3] | — |
| Process time (Low Power) | 10 sec to 15 min (PR_Strip_Low_xx)[3] | — |
| Gas flow | Maximum 1000 ml/min[3] | — |
| Holder capacity | 25 wafers[3] | — |
| Wafer size | 75 mm to 100 mm[3] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[2] |
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