Comparison ledger
SCREEN WS 820 L, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | WS 820 LSCREEN | 110Tegal |
|---|---|---|
| OEM | SCREEN | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 1996 Vintage · 1997 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | SCREEN WS 820 L | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | SiN Wet Etching[2] | — |
| Chemical | H3PO4 , IPA , HF[2] | — |
| PLC (Loader / Unloader) | Mitsubishi A3A CPU P21[2] | — |
| Olifra | wafer flatzone[2] | — |
| Main PC | Mitsubishi/LM (hard disket OK)[2] | — |
| Signal Tower | 3 color (GYR) Patlite lamp type[2] | — |
| Phase | 3 Phase, 208V, 170a, 100V[2] | — |
| Left/ Right Stepping Motor (Oriental | VEXTA A 6259)[2] | — |
| Up/Down Stepping Motor (Oriental | VEXTA PK 596 H[2] | — |
| Wafer Size | 8 inch[2] | — |
| Process | SiN wet etching, nitride strip[2] | — |
| Chemicals | H3PO4, IPA, HF[2] | — |
| Transfer Type | Rear type transfer flow[2] | — |
| IPA Dryer Fire Extinguisher | Yes[2] | — |
| PLC | Mitsubishi A3A CPU P21[2] | — |
| Wafer Flatzone | Olifra[2] | — |
| Front Carrier Detector Sensor | Yes[2] | — |
| Power | 3 Phase, 208V, 170A, 100V[2] | — |
| Carrier Loading | 2 carrier loading (stocker 8 carrier loading)[2] | — |
| Stepping Motors (Left/Right) | Oriental VEXTA A 6259[2] | — |
| Stepping Motors (Up/Down) | Oriental VEXTA PK 596 H[2] | — |
| Measuring Units | H3PO4 measuring tank, DIW measuring tank, H3PO4 DIW spiking pump, HF measuring tank[2] | — |
| Resistivity Meter | DKK AQ 10 (Final Rinse)[2] | — |
| Circulation Heater | In-Line Heater[2] | — |
| Circulation Pump | FS 30 HT 2[2] | — |
| Circulation Filter | High Temp Filter[2] | — |
| Aspirator Drain | Yes[2] | — |
| Pump | FS 30 HT 2[2] | — |
| Filter | High Temp Filter[2] | — |
| Equipment type | Wet Station[3] | — |
| Model | WS 820 L[3] | — |
| Process description | SiN wet etching - Process for Nitride Strip[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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