Comparison ledger
SPTS Synapse, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SynapseSPTS | 110Tegal |
|---|---|---|
| OEM | SPTS | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS Synapse | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Plasma source | ICP-based high density plasma source[2] | — |
| Dedicated materials | Etching of SiO2 and SixNy layers[2] | — |
| Wafer handling | Loadlock/chamber transfers for single wafer processing[2] | — |
| Clamp type | Electrostatic clamping[2] | — |
| Endpoint detection | Optical Emission Spectroscopy (EOS) and laser reflectometry/interferometry[2] | — |
| Gases available | O2, Ar, He, H2, SF6, C4F8, CF4, CHF3[2] | — |
| Gas flow rates | O2 0-200 sccm; Ar 0-140 sccm; He 0-500 sccm; H2 0-100 sccm; SF6 0-200 sccm; C4F8 0-60 sccm; CF4 0-50 sccm; CHF3 0-100 sccm[2] | — |
| Etch rate (SiO2) | 320 nm/min (with C4F8/H2/He chemistry and PR mask); 400 nm/min (with C4F8/H2/He chemistry and PR mask, APS_SiO2_PR_3:1 process)[2] | — |
| Etch rate (Si3N4) | 180 nm/min (with CHF3/SF6/H2 chemistry, smooth process); 190 nm/min (with CHF3/SF6 chemistry, APS_Si3N4_Smooth process)[2] | — |
| Selectivity (SiO2 to PR mask) | 4:1[2] | — |
| Selectivity (Si3N4 to PR mask) | >2.5:1 (smooth process); >1.5:1 (APS process)[2] | — |
| Process type | ICP-based high density plasma source[2] | — |
| Etch rate for SiO2 (PR mask, process 00_CMi_SiO2_PR) | 320 nm/min[2] | — |
| Selectivity SiO2 to PR (process 00_CMi_SiO2_PR) | 4:1[2] | — |
| Etch rate for Si3N4 (smooth process) | 190 nm/min[2] | — |
| Selectivity Si3N4 to PR (smooth process) | >1.5:1[2] | — |
| Manufacturer | SPTS[3] | — |
| Tool type | Stand-alone, single wafer etcher[3] | — |
| Process module | High-density plasma source[3] | — |
| Primary use | Dielectric etching[3] | — |
| Etch targets | SiO2 and Si3N4 layers[2] | — |
| Supported substrate size | 150 mm Si substrates[3] | — |
| Supported wafer diameter | 200 mm (8 in)[4] | — |
| Process gases | C4F8, CF4, SF6, O2, H2, He, Ar[3] | — |
| Electrode temperature range | -10 °C to 20 °C[4] | — |
| Substrate holder temperature range | -10 °C to +40 °C[3] | — |
| Substrate bias | 13.56 MHz RF generator, 1.2 kW maximum usable power; pulsing possible[3] | — |
| Process pressure | Up to 50 mTorr[3] | — |
| Wafer clamping | Electrostatic[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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