Comparison ledger
SPTS uEtch, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | uEtchSPTS | 110Tegal |
|---|---|---|
| OEM | SPTS | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS uEtch | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Process type | Vapor-phase, selective, isotropic etch on sacrificial oxide[2] | — |
| Process chemistry | Anhydrous HF and ethanol (C2H5OH) with nitrogen (N2) gas mixture[2] | — |
| Operating pressure | 125 Torr fixed for the standard processes[2] | — |
| Standard recipes | Recipe1, Recipe2, Recipe3, Recipe4, Recipe5[2] | — |
| Minimum etch rate - Recipe1 | 12 nm/min[2] | — |
| Minimum etch rate - Recipe2 | 38 nm/min[2] | — |
| Minimum etch rate - Recipe3 | 125 nm/min[2] | — |
| Minimum etch rate - Recipe4 | 153 nm/min[2] | — |
| Minimum etch rate - Recipe5 | 175 nm/min[2] | — |
| Chemistry | Anhydrous HF and ethanol (C2H5OH) vapor with N2 carrier[2] | — |
| Total pressure | 125 Torr (fixed for standard processes)[2] | — |
| Recipe 1 etch rate (thermal oxide) | 12 nm/min minimum[2] | — |
| Recipe 2 etch rate (thermal oxide) | 38 nm/min minimum[2] | — |
| Recipe 3 etch rate (thermal oxide) | 125 nm/min minimum[2] | — |
| Recipe 4 etch rate (thermal oxide) | 153 nm/min minimum[2] | — |
| Recipe 5 etch rate (thermal oxide) | 175 nm/min minimum[2] | — |
| Maximum wafer size for etch rate measurement | 4-inch substrate (blanket thermal SiO2)[2] | — |
| Chamber pressure range (manual needle valve) | 75–150 Torr[2] | — |
| Gases used | Anhydrous HF, ethanol (C2H5OH) vapor, nitrogen (N2)[2] | — |
| Total process pressure | 125 Torr[2] | — |
| Minimum etch rate (Recipe1, thermal oxide) | 12 nm/min[2] | — |
| Minimum etch rate (Recipe2, thermal oxide) | 38 nm/min[2] | — |
| Minimum etch rate (Recipe3, thermal oxide) | 125 nm/min[2] | — |
| Minimum etch rate (Recipe4, thermal oxide) | 153 nm/min[2] | — |
| Minimum etch rate (Recipe5, thermal oxide) | 175 nm/min[2] | — |
| Process pressure | 125 Torr (fixed for all standard processes)[2] | — |
| Process Recipe1 minimum etch rate (thermal oxide) | 12 nm/min[2] | — |
| Process Recipe2 minimum etch rate (thermal oxide) | 38 nm/min[2] | — |
| Process Recipe3 minimum etch rate (thermal oxide) | 125 nm/min[2] | — |
| Process Recipe4 minimum etch rate (thermal oxide) | 153 nm/min[2] | — |
| Process Recipe5 minimum etch rate (thermal oxide) | 175 nm/min[2] | — |
| Process gases | Anhydrous HF, ethanol vapor, N2[2] | — |
| Etch chemistry | Vapor-phase HF with ethanol catalyst, selective to SiO2 over Si and other materials[2] | — |
| Primary use | Sacrificial oxide release[2] | — |
| Target material | Sacrificial SiO2[2] | — |
| Recipe1 minimum etch rate | 12 nm/min[2] | — |
| Recipe2 minimum etch rate | 38 nm/min[2] | — |
| Recipe3 minimum etch rate | 125 nm/min[2] | — |
| Recipe4 minimum etch rate | 153 nm/min[2] | — |
| Recipe5 minimum etch rate | 175 nm/min[2] | — |
| Recommended minimum etch duration | 15 min[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[3] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[3] |
| Physical description | — | compact[1] |
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