Comparison ledger
SUSS MicroTec ACS200, SUSS MicroTec MJB4, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ACS200SUSS MicroTec | MJB4SUSS MicroTec |
|---|---|---|
| OEM | SUSS MicroTec | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | — | about 800 nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | i-line | i-line |
| Family | SUSS MicroTec ACS200 | SUSS MicroTec MJB4 |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Modular cluster tool[2] | — |
| Process | Coating and development of i-line photoresists[2] | — |
| Loading/unloading ports | Two loading/unloading ports: one cassette for coating and one cassette for development[2] | — |
| Wafer centering | Wafer centering station[2] | — |
| Spin-coating modules | Two spin-coating modules[2] | — |
| Development module | One development module with puddle and spray options[2] | — |
| Hotplates and coolplates | Two stacks of hotplates (9 in total) and coolplates (3 in total)[2] | — |
| HMDS priming | Additional HMDS-priming module[2] | — |
| Wafer handling | Standard SEMI-wafers of 100 mm and 150 mm diameter[2] | — |
| Supported wafer materials | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2] | — |
| Photoresists available | AZ ECI 3007, AZ ECI 3027, AZ 10XT-20, AZ 10XT-60, AZ 15nXT, AZ 40XT[2] | — |
| Wafer diameter supported | 100mm and 150mm (on request)[2] | — |
| Wafer types | Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[2] | — |
| Number of spin-coating modules | 2[2] | — |
| Number of development modules | 1[2] | — |
| Number of hotplates | 9 (total across two stacks)[2] | — |
| Number of coolplates | 3[2] | — |
| HMDS priming module | Yes (included)[2] | — |
| Robot model | Sankyo SC5000[2] | — |
| Photoresist type | i-line[2] | — |
| Voltage | 400 V[3] | — |
| Phase | 3 Phase[3] | — |
| Frequency | 60 Hz[3] | — |
| Thermal modules | Two stacks of hotplates (9 in total) and coolplates (3 in total), including an additional HMDS-priming module[2] | — |
| Wafer material | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2] | — |
| Central robot | Individual processing modules are fed by a central robot[2] | — |
| Robot | central robot feeding the individual processing modules[2] | — |
| Supported wafer diameters | 100 mm and 150 mm diameter[2] | — |
| Wafer size | Wafer Equipment[4] | up to 4 inch (100 mm) diameter[6] |
| Model | ACS200 Gen3[2] | — |
| OEM | SUSS MicroTec[5] | — |
| Standard wafer diameter handled | 100 mm and 150 mm diameter SEMI wafers[2] | — |
| Hotplates | Two stacks of hotplates, 9 total[2] | — |
| Coolplates | 3 coolplates[2] | — |
| Handling architecture | Individual processing modules are fed by a central robot[2] | — |
| Type | — | Mask/wafer aligner[6] |
| Use | — | Research and development[6] |
| Wafer diameter | — | up to 4 inch (100 mm)[6] |
| Alignment mode | — | Top side alignment (TSA)[6] |
| Exposure source | — | Mercury (Hg) lamp[6] |
| Wavelengths stated | — | 365 nm, 405 nm, 436 nm[6] |
| Illumination setup | — | 20 mW/cm2 @ 365 nm (i-line filter installed)[6] |
| Alignment precision | — | about 0.5 µm[6] |
| Exposure modes | — | flood-exposure, proximity, soft contact, hard contact[6] |
| Objective magnification | — | 5x, 10x[6] |
| Special offset objectives | — | For chip alignment; minimum separation down to 10 mm[6] |
| Stage travel | — | X = ±30 mm, Y = ±30 mm, Θ = ±4°[6] |
| Substrate thickness range | — | 0.1 mm to 4.0 mm[6] |
| Contact options | — | Soft, hard, and vacuum contact[7] |
| Mask thickness | — | up to 9 mm[7] |
| Optics option | — | Universal Optics option for UV 250, UV 350 and UV 400[7] |
| Alignment optics | — | SUSS single field microscope[7] |
| Alignment method | — | Wedge Error Compensation (WEC)[7] |
| Alignment modes stated | — | Top side and infrared alignment[7] |
| Key applications | — | LED lithography, MEMS, UV-NIL[7] |
| Applications | — | Research and development[6] |
| Substrate thickness | — | 0.1 mm up to 4.0 mm[6] |
| Light source | — | Mercury (Hg) lamp[6] |
| Spectral lines | — | 365 nm, 405 nm, 436 nm[6] |
| Illumination configuration | — | i-line (filter installed), only 365 nm line absorbed[6] |
| Default illumination intensity | — | 20 mW/cm2 @ 365 nm[6] |
| Resolution | — | Minimum about 800 nm with thin PR thickness (< 1 µm)[6] |
| Alignment modes | — | Top-side alignment (TSA)[6] |
| Wedge error compensation | — | Semi-automatic procedure[6] |
| Mask holders | — | Three different holders with vacuum clamping[6] |
| Chucks | — | Three different chucks for all sizes[6] |
| Optional objectives | — | 11x offset objectives: working distance 14.1 mm; minimum separation 10 mm[6] |
| Objectives magnification | — | 5x, 10x[6] |
| XY table travel | — | X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[6] |
| Substrate handling | — | Manual, up to 100 mm diameter[6] |
| High resolution prints | — | Down to 0.5 µm[7] |
| Universal Optics option | — | UV 250, UV 350, UV 400[7] |
| Contact modes | — | Soft, hard, vacuum contact[7] |
| Alignment options | — | Top side and infrared alignment[7] |
| Optics | — | SUSS single field microscope[7] |
| Exposure wavelength | — | i-line (365 nm) with filter installed; also lines at 405 nm and 436 nm[6] |
| Alignment accuracy | — | about 0.5 µm[6] |
| XY table travel (X, Y, Θ) | — | X = ±30 mm, Y = ±30 mm, Θ = ±4°[6] |
| Objective magnifications | — | 5x, 10x[6] |
| Offset objectives separation | — | minimum separation is 10 mm[6] |
| Maximum mask thickness | — | up to 9 mm[7] |
| Illumination power | — | 20 mW/cm² at 365 nm (i-line)[6] |
| Resolution (minimum) | — | about 800 nm with thin PR thickness (< 1 µm)[6] |
| Resolution (printed) | — | down to 0.5 µm[7] |
| XY table movement | — | X = ±30 mm, Y = ±30 mm, Θ = ±4°[6] |
| Special offset objectives minimum separation | — | 10 mm[6] |
| Mask thickness support | — | up to 9 mm[7] |
| Wafer/substrate thickness range | — | 0.1 mm to 4.0 mm[6] |
| Substrate size | — | to 100 mm[7] |
| Wedge Error Compensation (WEC) | — | semi-automatic procedure[6] |
| Machine type | — | Mask/wafer aligner for research and development[6] |
| Default exposure intensity | — | 20 mW/cm2 @ 365 nm[6] |
| XY stage travel | — | X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[6] |
| Small wafer/chip handling | — | Special offset objectives for alignment of small wafer/chips; minimum separation is 10 mm[6] |
| Contact and alignment features | — | Wedge Error Compensation (WEC); splitfield mode; top side and infrared alignment; vacuum contact; universal optics option for UV 250, UV 350, and UV 400[7] |
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