Comparison ledger
SUSS MicroTec MJB 3 Mask, SUSS MicroTec MJB 4 Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MJB 3 MaskSUSS MicroTec | MJB 4 MaskSUSS MicroTec |
|---|---|---|
| OEM | SUSS MicroTec | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SUSS MicroTec MJB | SUSS MicroTec MJB |
| Specifications | ||
| Configuration | Refurbished[1] | Front side Alignment[8] |
| Power | 350W lamphouse with Ushio USH-350DS Hg lamp[2] | — |
| Wafer size | 3 inch[2] | — |
| Lamp | 350W lamphouse with Ushio USH-350DS Hg lamp[2] | — |
| Optics type | UV400 near UV optics, 350-450 nm[2] | — |
| Resolution | 0.6 µm[2] | — |
| Microscope | Splitfield microscope with Leica objectives 3.5x/10x/20x[3] | Trinocular Split Field with Dual 5X & 10X Objectives[8] |
| Vacuum chuck size | 3 inch[2] | — |
| Mask holder size | 3x3 inch[2] | — |
| OEM | SUSS MicroTec[4] | SUSS MicroTec[9] |
| Model | MJB 3[4] | MJB 4[10] |
| Tool type | Mask aligner[5] | — |
| Category | Lithography[5] | — |
| Wafer sizes | 3 inch[2] | 2, 3, 4, 12 inch[8] |
| Max wafer size | 3" diameter[6] | — |
| Exposure optics | UV400 near UV optics, 350-450 nm[3] | 400 nm[9] |
| Lamp house | 350W lamphouse with Ushio USH-350DS Hg lamp[2] | — |
| Exposure modes | Vacuum contact, Hard contact, Soft contact[7] | — |
| Configured alignment | Top side alignment[7] | — |
| Trinocular Split Field Microscope | — | Dual 5X & 10X Objectives[8] |
| Exposure types | — | vacuum, hard, soft proximity contact[9] |
| Substrate size (max) | — | 4 inches in diameter[9] |
| Mask/substrate thickness capacity | — | 9.00 mm total[9] |
| Lamps | — | allowing sub-micron exposure in vacuum contact[9] |
| Photoresist tones | — | positive and negative[9] |
| Alignment type | — | topside only[9] |
| Minimum alignment mark separation (binocular) | — | 3.5 cm[9] |
| Typical pattern resolution | — | 1 µm[9] |
| Achievable alignment resolution | — | 1 µm[9] |
| Alignment features (as listed by reseller) | — | front side alignment; trinocular split field microscope with dual 5X & 10X objectives; video camera; high resolution alignment; Suss power supply[8] |
| Contact exposure modes | — | vacuum, hard, soft, proximity contact[9] |
| Substrate size | — | up to 4 inches in diameter[9] |
| Maximum mask and wafer total thickness | — | 9.00 mm[9] |
| Adjustment accuracy (X, Y, theta) | — | below 1 µm[9] |
| Exposure optics wavelength | — | 400 nm[9] |
| Topside alignment | — | yes[9] |
| Wafer sizes (listing) | — | 2, 3, 4, 12 inch[8] |
| Alignment type (listing) | — | Front side[8] |
| Camera | — | Video Camera[8] |
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