Comparison ledger
Tegal 110, Tegal 901G, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | 901GTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; square and rectangular substrates |
| Process node | — | — |
| Introduced | — | 1999 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tegal 901G |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Tool type | — | diode plasma etcher[3] |
| Configuration | — | special configuration for GaAs processing[3] |
| Configured features | — | special sensors and electrode designs[4] |
| Intended applications on platform | — | pad, zero layer, non-selective nitride, backside, planarization, oxide, nitride, poly, and III-V materials applications such as GaAs[4] |
| Substrate sizes on platform | — | 75 mm to 150 mm round substrates as well as square and rectangular substrates[4] |
| Equipment Type | — | Diode plasma etcher[3] |
| Process | — | Plasma etching[3] |
| Substrate Size | — | 75 mm to 150 mm round substrates; square and rectangular substrates[4] |
| Series | — | 900 series[3] |
| Installed Base (900 Series) | — | More than 1,300 systems worldwide[3] |
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