Comparison ledger
Tegal 110, Tegal 983, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | 983Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 125mm |
| Process node | — | down to 0.5 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tegal 983 |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Model | — | 983[3] |
| Product name | — | 983 ACS[3] |
| Category | — | Diode plasma etch tool[4] |
| Fixed electrode gap | — | 6 mm[4] |
| Round substrate size | — | 125 mm to 150 mm round silicon and GaAs substrates[4] |
| Rectangular substrate size | — | 125 mm to 150 mm on a side[4] |
| Best-suited design rules | — | down to 0.5 micron[4] |
| Wafer size | — | 125mm[5] |
| Tool type | — | diode plasma etch tool[4] |
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