Comparison ledger
Tegal 110, Tokyo Electron U 2 E 655 PP RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | U 2 E 655 PP RIETokyo Electron |
|---|---|---|
| OEM | Tegal | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tokyo Electron U 2 |
| Cited variants |
| — |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[2] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[2] | — |
| Physical description | compact[1] | — |
| Configuration | — | SiO2/SiN[3] |
| Manufacturer | — | Tokyo Electron[5] |
| Model | — | U 2 E 655 PP[5] |
| Equipment type | — | Reactive ion etcher[5] |
| Category | — | Etch[5] |
| Process | — | SiO2/SiN[5] |
| Chambers | — | 2[5] |
| Asset # | — | 69367[4] |
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