U 2 E 655 PP RIE

The Tokyo Electron U 2 E 655 PP RIE is a reactive ion etch system, a class of dry etch equipment used in semiconductor and related microfabrication processes. Such systems transfer lithographic patterns into underlying films by removing exposed material while leaving protected regions defined by a mask or resist layer.

Reactive ion etch systems operate by placing the wafer in a low-pressure process chamber, introducing controlled process gases, and energizing the gas to form a plasma. Reactive species generated in the plasma chemically interact with the exposed film, while ions accelerated toward the wafer assist material removal and improve etch directionality.

The balance between chemical reaction and physical ion impact determines selectivity, anisotropy, sidewall shape, residue behavior, and mask consumption. Machines of this class therefore rely on stable control of plasma conditions, gas composition, chamber pressure, power delivery, wafer temperature, and exhaust conditions so that the intended film is removed with the desired profile while limiting attack on underlying or masking materials.

Such systems are typically used after film deposition and lithographic patterning, once the areas to be opened are defined by resist or a hard mask. After etching, the wafer proceeds to subsequent cleaning, resist stripping, inspection, or additional deposition and patterning steps, depending on the device flow.