Aixtron
2600 G 3 HT
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Aixtron 2600 G 3 HT is a metal organic chemical vapor deposition reactor. The Aixtron 2600 G 3 HT is designed for epitaxial growth of compound semiconductor thin films. The Aixtron 2600 G 3 HT is configured for wafer sizes of three inches and six inches.[1]
What it is
The Aixtron 2600 G 3 HT is a metal organic chemical vapor deposition reactor designed for epitaxial growth of compound semiconductor thin films. The Aixtron 2600 G 3 HT is part of the Aixtron AIX 2600 family. The Aixtron 2600 G 3 HT is configured for wafer sizes of three inches and six inches. The Aixtron 2600 G 3 HT supports processes for InGaN and AlInGaP MOCVD epitaxy.[1]
How it works
The Aixtron 2600 G 3 HT uses an RF coil heating system with a Trumpf Huttinger RF generator. The Aixtron 2600 G 3 HT includes gas foil rotation. The Aixtron 2600 G 3 HT can include in-situ pyrometry for temperature measurement during deposition.[1]
Applications
The Aixtron 2600 G 3 HT supports InGaN MOCVD epitaxy and AlInGaP MOCVD epitaxy.[1]
What do the numbers mean?
Wafer handling1
Configuration & options6
Vintage & configurations
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| 2600 G 3 HT IC | — | — | Configured for InGaN MOCVD epitaxy and supports 6 x 6-inch wafers. | waferpedia.com[5] |
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
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Frequently asked questions
What kind of tool is the Aixtron 2600 G 3 HT?
The Aixtron 2600 G 3 HT is a metal organic chemical vapor deposition reactor designed for epitaxial growth of compound semiconductor thin films.[1]
Which process types does the Aixtron 2600 G 3 HT support?
The Aixtron 2600 G 3 HT supports InGaN MOCVD epitaxy and AlInGaP MOCVD epitaxy.[1]
Does the Aixtron 2600 G 3 HT include in-situ monitoring capability?
The Aixtron 2600 G 3 HT is equipped with in-situ pyrometry for real-time temperature measurement during deposition.[1]
Not publicly documented
The following facts about the 2600 G 3 HT are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 2600 G 3 HT are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the 2600 G 3 HT are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 2600 G 3 HT are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 2600 G 3 HT is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the 2600 G 3 HT are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (5)Every fact above is drawn from these public sources
- [1]waferpedia.com — waferpedia.comwaferpedia.com
- [2]Inventory photo
- [3]Inventory photo
- [4]Inventory photo
- [5]waferpedia.com — waferpedia.comwaferpedia.com
Last updated Oct 19, 2026.