36 entries
- G 5 MOCVD ReactorAixtronCategoryDeposition
- BlackMagic 6Aixtron
The Aixtron BlackMagic 6 is a plasma-enhanced chemical vapor deposition (PECVD) system designed for 6-inch wafers, used for carbon nanotube growth and graphene synthesis.
- AIX 2400 Planetary ReactorAixtronCategoryDeposition
- AIX 2800 G 4 WW MOCVD ReactorAixtron
The Aixtron AIX 2800 G 4 WW is a metal organic chemical vapor deposition (MOCVD) reactor designed for processing 8-inch wafers.
CategoryDeposition - 2800 G 4 WWAixtron
The Aixtron 2800 G 4 WW is a model from Aixtron.
- AIX G 5 WW EPIAixtronCategoryDeposition
- AIX G 10AixtronCategoryDeposition
- 2400 G 2 MOCVD ReactorAixtronCategoryDeposition
- 2400 G 3 MOCVD ReactorAixtronCategoryDeposition
- 2600 G 3 HT MOCVD ReactorAixtron
The Aixtron 2600 G 3 HT is a metal organic chemical vapor deposition reactor.
CategoryDeposition - 2600 G 3 HTAixtron
- G 3 ReactorAixtron
- G 3 MOCVDAixtronCategoryDeposition
- G 5 Plus MOCVDAixtronCategoryDeposition
- AIX R 6 MOCVDAixtron
The Aixtron AIX R 6 is a metal organic chemical vapor deposition system.
CategoryDeposition - AIX 2400 G 3 R MOCVDAixtron
The Aixtron AIX 2400 G 3 R is an MOCVD (Metal Organic Chemical Vapor Deposition) system.
CategoryDeposition - AIX G 4Aixtron
The Aixtron AIX G 4 is a 4-inch deposition system for GaN epitaxy processes.
CategoryDeposition - AIX 2600 G 3Aixtron
- AIX 2600 G 3 RAixtron
- G 5 WW C SiC Epitaxy ReactorAixtron
The Aixtron G 5 WW C SiC Epitaxy Reactor is a 6-inch wafer deposition system with a wafer transfer module.
CategoryDepositionWaferWafer transfer module - AIX 2600 G 3 Planetary ReactorAixtronCategoryDeposition
- AIX 2600 G 3 IC R Planetary ReactorAixtron
The Aixtron AIX 2600 G 3 IC R Planetary Reactor is a deposition system described as a 3-phase, 4-wire + ground, 50/60 Hz unit.
CategoryDeposition - AIX G 5 + CAixtron
- G 5 HT MOCVDAixtron
The Aixtron G 5 HT is an MOCVD (Metal Organic Chemical Vapor Deposition) system with stated wafer sizes of 4 inch and 6 inch.
CategoryDeposition - AIX 2800 G 4 HT MOCVDAixtron
The Aixtron AIX 2800 G 4 HT is an MOCVD (Metal Organic Chemical Vapor Deposition) system.
CategoryDeposition - 2600 G 3 IC R MOCVD ReactorAixtron
The Aixtron 2600 G 3 IC R is a MOCVD reactor configured for AlInGaP MOCVD epitaxy and 7 x 6-inch wafers.
CategoryDeposition - AIX 2600 G 3 MOCVDAixtron
The Aixtron AIX 2600 G 3 is an MOCVD deposition system.
CategoryDeposition - AIX 2600 G 3 R MOCVD OMVPEAixtron
The Aixtron AIX 2600 G 3 R is a MOCVD/OMVPE deposition system for GaAs or InP wafers, with wafer sizes stated as 2, 3, 4, and 6 inch.
CategoryDeposition - AIX 2600 G 3 MOCVD ReactorAixtron
The Aixtron AIX 2600 G 3 is a MOCVD reactor for 2, 3, and 4 inch wafers.
CategoryDeposition - 2800 G 4 HT MOCVD ReactorAixtronCategoryDeposition
- G 5 PlusAixtron
The Aixtron G 5 Plus is a GaN epitaxy deposition system stated to support 6-inch and 8-inch wafer sizes.
CategoryDeposition - AIX G 5 WW EPI ReactorAixtron
The Aixtron AIX G 5 WW EPI Reactor is an epitaxial silicon deposition system for 4-inch wafers.
CategoryDeposition - G 5 HT IC 2 MOCVD ReactorAixtron
The Aixtron G 5 HT IC 2 is a MOCVD reactor configured for InGaN MOCVD epitaxy and 6 x 6-inch wafers.
CategoryDeposition - 2600 G 3 HT IC MOCVD ReactorAixtronCategoryDeposition
- G 10 SiC EPI ReactorAixtron
The Aixtron G 10 SiC EPI Reactor is an epitaxial silicon deposition system for 6-inch and 8-inch wafers.
CategoryDeposition - G 4 MOCVDAixtron
The Aixtron G 4 MOCVD is a metal organic chemical vapor deposition system described with 4-inch wafer size support.
CategoryDeposition
