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Comparison ledger

ngp80-rieversus110

Oxford Instruments ngp80-rie, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
ngp80-rieOxford Instruments
110Tegal
OEMOxford InstrumentsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments ngp80-rieTegal 110
Cited variants—
Specifications
ModelNGP80 RIE[2]—
OEMOxford[2]—
Related equipment page labelOxford NGP80 RIE[2]—
Process areaPlasma Etch[4]—
LocationW1-062[4]—
Wafer size200mm[5]—
Process typeReactive ion etching (RIE)[5]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[6]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[6]
Physical description—compact[1]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]confluence.nanofab.ualberta.caconfluence.nanofab.ualberta.ca
  3. [3]waferpedia.comwaferpedia.com
  4. [4]confluence.nanofab.ualberta.caconfluence.nanofab.ualberta.ca
  5. [5]waferpedia.comwaferpedia.com
  6. [6]waferpedia.comwaferpedia.com