Comparison ledger
CEE 1000 Hot Plate, Mattson 2800 RTP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2800 RTPMattson | |
|---|---|---|
| OEM | CEE | Mattson |
| Category | Thermal / Diffusion | Thermal / Diffusion |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 1000 Hot Plate | Mattson 2800 RTP |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 4"[2] | ATM-307-S-CE Robot[3] |
| Type | Hot Plate[2] | Rapid Thermal Process (RTP) system[3] |
| Wafer Size | 4 inch[2] | — |
| Model | — | 2800[3] |
| Make | — | Mattson[3] |
| Dual-side heating | — | For high ramp rates[4] |
| Independent lamp control | — | Improved temperature uniformity across wafer[4] |
| Dynamic individual lamp adjustment | — | Available in any step for excellent uniformity during all process steps[4] |
| OPUS simulation model | — | For easy uniformity optimization with small number of test wafers[4] |
| Pyrogenic ambient control | — | For thicker oxides at lower temperatures and reduced thermal stress[4] |
| Optimized tube purge | — | <10 sec[4] |
| Throughput | — | 30% increased throughput[4] |
| Footprint | — | Small footprint[4] |
| Uptime | — | High uptime[4] |
| Manufacturer | — | Mattson[3] |
| Equipment type | — | Rapid Thermal Process (RTP) system[3] |
| Category | — | Thermal / Diffusion[5] |
| Description | — | workhorse tool for mainstream RTP applications[4] |
| Heating approach | — | dual-side heating[4] |
| Lamp control | — | independent lamp control[4] |
| Lamp adjustment | — | dynamic individual lamp adjustment in any step[4] |
| Ambient control | — | pyrogenic ambient control[4] |
| Tube purge | — | optimized tube purge (<10 sec)[4] |
| Applications | — | silicide/barrier formation; BPSG reflow and densification; shallow junction formation; implant annealing; poly emitter drive-in; thin gate dielectrics; RTO, RTN and RTON process; new gate dielectrics; thermal donor annihilation; multilayer annealing for metallization; solar cells; ferroelectrics (e.g. PZT)[4] |
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