Comparison ledger
Lam Research 2300 Exelan, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 ExelanLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Configuration | FLEX 4CH[3] | — |
| Manufacturer | Lam Research[4] | — |
| Model | 2300 Exelan Flex[4] | — |
| Equipment type | Etch system[4] | — |
| Wafer size | 300 mm (12 inch)[4] | — |
| Power | 208 VAC, 50/60 Hz[4] | — |
| Full load current | 56 A[4] | — |
| Main circuit breaker rating | 70 A[4] | — |
| Dielectric etch capability | Critical front-end HARC and SAC etch; backend in situ low-k dual damascene etch[5] | — |
| Technology node | Sub-65 nm applications[5] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[6] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[6] |
| Physical description | — | compact[2] |
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