Comparison ledger
Lam Research 4520 i Oxide, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 4520 i OxideLam Research | 110Tegal |
|---|---|---|
| OEM | Lam Research | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Rainbow 4520 | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Bulkhead system mount w/tunnel covers[2] | — |
| Software Version | Classic 7,31-42[3] | — |
| Phase | Main Power 208V, 3 Phase, 5Wire, 175A, 60/[2] | — |
| Make | Lam[3] | — |
| Model | 4520 i[3] | — |
| Equipment type | Oxide Etcher[4] | — |
| Wafer size | 6 inch[3] | — |
| Clamp type | ESC[3] | — |
| System mount | Bulkhead system mount w/tunnel covers[3] | — |
| RF power | Rack AE PDW2200 RFG1250 13,56MHz[3] | — |
| Main power | 208V, 3 Phase, 5Wire, 175A, 60/[3] | — |
| Endpoint detector | Single lower chamber endpoint detector (405/520nm) Non-heated endpoint window[3] | — |
| Vacuum / pumping | Low pressure chamber manifold; AC--2 chamber pressure control[3] | — |
| Gas 1 | AR 375sccm[3] | — |
| Gas 2 | CF4 100 sccm[3] | — |
| Gas 3 | CHF3 50 sccm[3] | — |
| Gas 4 | He 200 sccm[3] | — |
| Gas 5 | O2 20 sccm[3] | — |
| Gas 6 | N2 200 sccm[3] | — |
| Gas 8 | He 1000sccm[3] | — |
| UPC | He (50 sccm)[3] | — |
| Wafer handling | Hine 38A open cassette Send/Receive indexers[3] | — |
| Gas 7 | NF3 500 sccm[2] | — |
| Applications | Contact etch; Planarization; Via etch; Trench mask etch; Pad etch[5] | — |
| System | Single wafer, two active processing chambers, vacuum load-locked low pressure oxide system[5] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[6] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[6] |
| Physical description | — | compact[1] |
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