Comparison ledger
Tegal 110, Tokyo Electron TE 8500, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | TE 8500Tokyo Electron |
|---|---|---|
| OEM | Tegal | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Tokyo Electron TE 8500 |
| Cited variants |
| |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[3] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[3] | — |
| Physical description | compact[1] | — |
| Wafer size | — | 6 inch[2] |
| Process type | — | Etch (Dry)[5] |
| Chambers (PESC Dry) | — | 1[2] |
| Application (PESC Dry) | — | Oxide etch with endpoint capability[2] |
| Vintage | — | 1994[5] |
| OEM | — | Tokyo Electron[6] |
| Model | — | TE 8500[6] |
| Category | — | Etch[5] |
| Process | — | ETCH(DRY)[5] |
| Item description year | — | 1994[5] |
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