Comparison ledger
Tegal 110, Ulvac NE 950, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 110Tegal | NE 950Ulvac |
|---|---|---|
| OEM | Tegal | Ulvac |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 110 | Ulvac NE 950 |
| Cited variants |
| |
| Specifications | ||
| model | 110 SE[1] | — |
| application focus | process development applications[1] | — |
| process capability | deep silicon plasma etching[1] | — |
| capabilities | very high aspect ratio trench etch and profile control[1] | — |
| configuration | multiple configurations with minimum technical intervention[1] | — |
| System type | plasma etch system[3] | — |
| Supported components | MEMS and 3D-IC components[1] | — |
| Control capability | very high aspect ratio trench etch and profile control[3] | — |
| Physical description | compact[1] | — |
| Manufacturer | — | Ulvac[4] |
| Model | — | NE 950[4] |
| Category | — | Etch[5] |
| Tool type | — | ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch) system[5] |
| Wafer description | — | chamber described for 2" to 12" wafers[5] |
| Process type | — | ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch)[5] |
| Wafer size | — | 2" to 12" wafers[5] |
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