STS 320

Models in this family

1. 320

   The STS 320 is a parallel-plate reactive ion etching (RIE) tool for etching silicon, silicon nitride, and transition metals with volatile fluorides.

   Cited variants

   Designation	Generation	Vintage	Changes	Source
   STS 320 SF4	—	—	Uses SF4 at 13.56 MHz, 100 mtorr, and is described as targeting silicon, silicon nitride, and transition metals with volatile fluorides.	nanocenter.umd.edu[1]
   STS SF4 O2	—	—	Uses SF4 and O2 at 13.56 MHz, 100 mtorr, and is described as increasing target-material etch rate while also increasing photoresist etch rate.	nanocenter.umd.edu[1]
   STS 320 CF4	—	—	Uses CF4 at 13.56 MHz, 100 mtorr, and is described as targeting silicon dioxide.	nanocenter.umd.edu[1]
   STS CF4 O2	—	—	Uses CF4 and O2 at 13.56 MHz, 100 mtorr, and is described as etching silicon nitride and silicon faster than oxide while reducing fluorocarbon buildup.	nanocenter.umd.edu[1]

Sources