Waferpedia

Karl Suss

SB8

Backend6"Karl Suss SB8 family
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The Karl Suss SB8 Wafer Bonder is a wafer bonding system used in backend semiconductor processing.[1]

SB8 — nanolab.ucla.edu
Fig. 01SB8nanolab.ucla.edu[1]

Wafer size

6"

Power

up to 2000 V[2]

Vacuum

5e-5 to 3e3 Torr with nitrogen[2]

Performance

+/- 5 degrees[2]

Control era

Windows-based

What it is

General reference — not yet source-verified

Wafer bonders join wafers or substrate pieces into a permanent stack under controlled thermal, force, and ambient conditions. Wafer bonders are used in backend and device integration work where completed or partially completed substrates must be attached with controlled alignment and pressure.

How it works

The Karl Suss SB8 supports wafer bonding from 50°C to 550°C with ±5 degrees accuracy and ±3% uniformity. The Karl Suss SB8 provides upper and lower heating of samples. The Karl Suss SB8 operates over an environment bonding pressure range from 5e-5 to 3e3 Torr with nitrogen. The Karl Suss SB8 supports sample sizes from pieces to 6-inch wafers. The Karl Suss SB8 provides forces up to 20 kN for a 150 mm wafer size. The Karl Suss SB8 supports anodic bonding up to 2000 V. The Karl Suss SB8 is computer controlled in a Windows environment with multiple recipe steps and saving of recipes and data. The Karl Suss SB8 is configured for manual loading of wafers.[2]

The Karl Suss SB8 mates with the Karl-Suss MA-6 aligner to allow aligned bonding.[2]

Where it fits in the process flow

General reference — not yet source-verified

Wafer bonding is typically performed after substrate preparation and surface conditioning, and before downstream thinning, singulation, packaging, or further stacked-device processing. Backend bonding tools commonly sit near cleaning, alignment, and post-bond thermal or finishing steps because the bonded stack often moves on to mechanical, thermal, or inspection operations.

Applications

The Karl Suss SB8 is capable of silicon fusion, anodic, eutectic, and thermal compression bonding.[2]

  • silicon fusion bonding
  • anodic bonding
  • eutectic bonding
  • thermal compression bonding
  • aligned bonding

What do the numbers mean?

Power & electrical1

Anodic bonding voltage
up to 2000 V[2]
Accurate?

Vacuum & pumping4

Bonding pressure environment
5e-5 to 3e3 Torr with nitrogen[2]
Accurate?
Chamber pressure control
Flexibly programmable (exact range not stated)[3]
Accurate?
Bonding pressure range
5e-5 to 3e3 mBar[2]
Accurate?
Wafer bonding environment (UCLA tool)
5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen[2]
Accurate?

Wafer handling9

Force capability
up to 20 kN for a 150 mm wafer size[2]
Accurate?
Sample size
pieces to 6" wafers[2]
Accurate?
Loading
manual loading of wafers[2]
Accurate?
Wafer size
Up to 200 mm (wafers and various substrate shapes/sizes)[3]
Accurate?
Wafer size
Pieces to 6" wafers; SB8 Gen2 handles wafers up to 200 mm[2]
Accurate?
Bond force
Up to 20 kN for a 150 mm wafer size; SB8 Gen2: 300 N to 20 kN[2]
Accurate?
Load/unload
Manual loading of wafers (UCLA tool)[2]
Accurate?
Automation level (SB8 Gen2)
Semi-automated universal wafer bonding system[3]
Accurate?
Substrate shapes/sizes (SB8 Gen2)
Supports substrates in various shapes and sizes[3]
Accurate?

Performance4

Temperature accuracy
+/- 5 degrees[2]
Accurate?
Temperature uniformity
+/- 3% uniformity[2]
Accurate?
Temperature accuracy/uniformity
+/- 5 degrees accuracy, +/- 3% uniformity[2]
Accurate?
Alignment capability
Aligned bonding by using MA/BA-6 aligner[2]
Accurate?

Control & software2

Control
Windows-based computer control[2]
Accurate?
Sequential Spacer Removal (SSR)
Yes (individual spacer actuation controlled via recipe)[3]
Accurate?

Dimensions & facilities2

Footprint
1.2 m x 0.6 m[3]
Accurate?
Footprint (SB8 Gen2)
1.2 m x 0.6 m[3]
Accurate?

Configuration & options14

Bonding types
silicon fusion, anodic, and eutectic bonding[2]
Accurate?
Temperature range
50°C to 550°C[2]
Accurate?
Heated samples
upper and lower heating of samples[2]
Accurate?
Aligned bonding
mates with the Karl-Suss MA-6 aligner for aligned bonding[2]
Accurate?
Temperature range
30°C to 500°C (measured directly on tooling plate surface)[3]
Accurate?
Temperature ramping speed
Up to 30 K/min[3]
Accurate?
Bond force range
300 N to 20 kN[3]
Accurate?
Bonding technologies supported
Fusion bonding, eutectic bonding, diffusion bonding, anodic bonding, anodic triple stack bonding, adhesive bonding[3]
Accurate?
Bonding technologies
Silicon fusion, anodic, and eutectic bonding; SB8 Gen2 also supports diffusion bonding, adhesive bonding, and anodic triple stack bonding[2]
Accurate?
Bonding heads
Two separate heads; one for anodic bonding, another for fusion bonding[2]
Accurate?
Temperature range
50°C to 550°C; SB8 Gen2: 30°C to 500°C measured on tooling plate surface[2]
Accurate?
Heating
Upper and lower heating of samples[2]
Accurate?
Temperature ramp rate (SB8 Gen2)
Up to 30 K/min[3]
Accurate?
Spacer removal (SB8 Gen2)
Sequential Spacer Removal (SSR) with individual spacer actuation; spacers removed one after another ensuring no clamping force[3]
Accurate?

Vintage & configurations

Control-system eraWindows-based[2]

Documented models & variants

DesignationGenerationVintageChangesSource
SB8 Gen2Gen2—Semi-automated universal wafer bonding system capable of handling wafers up to 200 mm; supports fusion, eutectic, diffusion, anodic, anodic triple stack, and adhesive bonding; temperature range 30–500 °C, ramp rate up to 30 K/min; bond force 300 N to 20 kN; footprint 1.2 m x 0.6 m; features Sequential Spacer Removal (SSR) for precise post-bond alignment.suss.com[3]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Bonding pressure environment5e-5 to 3e3 Torr with nitrogen[2]
  • Anodic bonding voltageup to 2000 V[2]
  • Chamber pressure controlFlexibly programmable (exact range not stated)[3]
  • Bonding pressure range5e-5 to 3e3 mBar[2]
  • Wafer bonding environment (UCLA tool)5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What bonding methods does the Karl Suss SB8 support?

The Karl Suss SB8 is capable of silicon fusion, anodic, and eutectic bonding. The system also supports thermal compression as well as anodic bonding.[2]

What temperature range does the Karl Suss SB8 provide for bonding?

The Karl Suss SB8 provides wafer bonding from 50°C to 550°C.[2]

What sample sizes can the Karl Suss SB8 handle?

The Karl Suss SB8 supports sample sizes from pieces to 6-inch wafers.[2]

Can the Karl Suss SB8 be used for aligned bonding?

The Karl Suss SB8 mates with the Karl-Suss MA-6 aligner to allow aligned bonding.[2]

Not publicly documented

The following facts about the SB8 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the SB8 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented failure modes or field errata for the SB8 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the SB8 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the SB8 are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the SB8 are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

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Sources & citations

Sources (5)Every fact above is drawn from these public sources
  1. [1]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
  2. [2]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
  3. [3]suss.com — suss.comsuss.com
  4. [4]Equipment | UCLA Nanolab — nanolab.ucla.edunanolab.ucla.edu
  5. [5]SB8 Gen2 | SUSS — suss.comsuss.com
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Last updated Oct 16, 2026.