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Lam Research

Concept One 200 PECVD-TEOS

DepositionLam Research Concept One 200 family
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Concept One 200 PECVD-TEOS — Inventory photo
Fig. 01Concept One 200 PECVD-TEOSInventory photo[1]

What it is

General reference — not yet source-verified

PECVD systems deposit thin films from reactive gases in a plasma environment. PECVD tools are used in semiconductor manufacturing when a dielectric or related film must be formed on patterned wafers at temperatures below those typical of many thermal deposition methods.

How it works

General reference — not yet source-verified

PECVD deposition uses a plasma to activate precursor chemistry and form a solid film on the wafer surface. TEOS-based PECVD commonly uses organosilicon feed chemistry to produce silicon-oxide films, while related chamber configurations in this equipment class can also be used for silicon nitride deposition. Chamber designs in this class control gas flow, pressure, plasma power, temperature, and time to set film properties such as thickness, uniformity, and stress.

Where it fits in the process flow

General reference — not yet source-verified

PECVD deposition sits in thin-film formation steps within front-end and back-end semiconductor process flows. PECVD dielectric films are commonly deposited after surface preparation and before patterning, etch, planarization, or metallization steps, depending on the layer being built.

Applications

General reference — not yet source-verified

TEOS-based PECVD tools are used to form oxide films for insulation, passivation, and interlayer dielectric functions. PECVD dielectric tools in this class are also used for nitride deposition when configured for that chemistry, supporting barrier, passivation, and hard-mask related applications.

What do the numbers mean?

Power & electrical4

208 Volts AC[1]
Accurate?
Phase
3 Phase[1]
Accurate?
50/60 Hz[1]
Accurate?
Electrical
208 Volts AC, 3 Phase, 50/60 Hz[1]
Accurate?

Wafer handling1

Wafer Sizes
8 inch[2]
Accurate?

Gas & chemistry1

Process
PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[1]
Accurate?

Configuration & options5

CCP/SiO, SiN[2]
Accurate?
Make
Lam / Novellus[1]
Accurate?
Model
Concept One 200[1]
Accurate?
Process description
8" CCP/SiO, SiN[2]
Accurate?
Product details
8" CCP/SiO, SiN[2]
Accurate?
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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Configuration208 Volts AC[1]
  • Phase3 Phase[1]
  • Configuration50/60 Hz[1]
  • ProcessPECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[1]
  • Electrical208 Volts AC, 3 Phase, 50/60 Hz[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What type of process is the Concept One 200 configured for?

The Concept One 200 is configured for PECVD-TEOS, expanded as plasma-enhanced chemical vapor deposition using tetraethyl orthosilicate.[1][2]

Not publicly documented

The following facts about the Concept One 200 PECVD-TEOS are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Concept One 200 PECVD-TEOS are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Concept One 200 PECVD-TEOS are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Concept One 200 PECVD-TEOS are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Concept One 200 PECVD-TEOS are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Concept One 200 PECVD-TEOS is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (2)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]inventory listing
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Last updated Oct 21, 2026.

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