Tystar
3600
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Tystar 3600 is an LPCVD furnace system intended for deposition of low-stress silicon nitride and low-temperature oxide. The Tystar 3600 uses process gases including silane, dichlorosilane, and ammonia. The Tystar 3600 supports wafer boats for 2 inch, 3 inch, 4 inch, and 6 inch wafers.[1]
What it is
The Tystar 3600 is configured with a Furnace Control System (FCS-10) touchscreen interface and a separate Data Capture System (DCS-30) computer. The system is intended for deposition of low-stress silicon nitride (Si3N4, LSN) and low-temperature oxide (LTO).[1]
How it works
The Tystar 3600 utilizes two separate tubes: Tube 1 for low-stress nitride processes and Tube 3 for low-temperature oxide processes. The default deposition temperature for low-stress nitride is 835 °C with a pressure of 250 mTorr. For low-temperature oxide, the default temperature is 450 °C. Process gases include ammonia (NH3), dichlorosilane (DCS), and silane. The system also includes an exhaust abatement system (Jupiter Scientific Callisto) for treating process exhaust.[1]
Applications
The Tystar 3600 supports two primary deposition processes: low-stress silicon nitride (LSN) using ammonia and dichlorosilane, and low-temperature oxide (LTO) using silane-based chemistry. Specific recipes provided for Tube 1 are LSNITR.001 and STNITR.001, and for Tube 3 is LTO.003.[1]
What do the numbers mean?
Vacuum & pumping3
Wafer handling3
Gas & chemistry5
Control & software1
- Control systems
- FCS-10 (Furnace Control System) touchscreen computer, DCS-30 (Data Capture System) computer[1]
Configuration & options6
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Process typeLPCVD (Low Pressure Chemical Vapor Deposition)[1]
- LSN deposition pressure (default)250 mTorr[1]
- LSN ammonia flow (default)100 sccm (high flow), 20 sccm (low flow)[1]
- LSN dichlorosilane flow (default)100 sccm[1]
- LTO deposition pressure (default)400 mTorr[1]
- LTO oxygen flow (default)30 sccm[1]
- LTO silane flow (default)20 sccm[1]
- Process gasesSilane (SiH4), Dichlorosilane (DCS), Ammonia (NH3)[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What films can be deposited with the Tystar 3600?
The Tystar 3600 is used for low-pressure chemical vapor deposition of low-stress silicon nitride (Si3N4, LSN) and low-temperature oxide (LTO).[1]
What is the default deposition temperature for low-stress nitride?
The default temperature for low-stress nitride deposition in Tube 1 is 835 °C.[1]
What is the default pressure for low-stress nitride deposition?
The default pressure for low-stress nitride deposition is 250 mTorr.[1]
What process gases are used in the Tystar 3600?
The Tystar 3600 uses ammonia (NH3), dichlorosilane (DCS), and silane as process gases for deposition.[1]
What are the standard recipe names for each tube?
For Tube 1 the recipes are LSNITR.001 and STNITR.001; for Tube 3 the recipe is LTO.003.[1]
Not publicly documented
The following facts about the 3600 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 3600 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 3600 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 3600 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 3600 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 3600 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (1)Every fact above is drawn from these public sources
- [1]aggiefab.tamu.edu — aggiefab.tamu.eduaggiefab.tamu.edu
Last updated Oct 11, 2026.
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