Tool family
The Aixtron 2600 G 3 HT is a metal organic chemical vapor deposition reactor.
The Aixtron 2600 G 3 IC R is a MOCVD reactor configured for AlInGaP MOCVD epitaxy and 7 x 6-inch wafers.
The Aixtron AIX 2600 G 3 IC R Planetary Reactor is a deposition system described as a 3-phase, 4-wire + ground, 50/60 Hz unit.
The Aixtron AIX 2600 G 3 is a MOCVD reactor for 2, 3, and 4 inch wafers.
The Aixtron AIX 2600 G 3 R is a MOCVD/OMVPE deposition system for GaAs or InP wafers, with wafer sizes stated as 2, 3, 4, and 6 inch.
The Aixtron 2600 G 3 HT is a metal organic chemical vapor deposition reactor.
The Aixtron 2600 G 3 IC R is a MOCVD reactor configured for AlInGaP MOCVD epitaxy and 7 x 6-inch wafers.
The Aixtron AIX 2600 G 3 IC R Planetary Reactor is a deposition system described as a 3-phase, 4-wire + ground, 50/60 Hz unit.
The Aixtron AIX 2600 G 3 is a MOCVD reactor for 2, 3, and 4 inch wafers.
The Aixtron AIX 2600 G 3 R is a MOCVD/OMVPE deposition system for GaAs or InP wafers, with wafer sizes stated as 2, 3, 4, and 6 inch.