AIX 2600 G 3 IC R Planetary Reactor

The Aixtron AIX 2600 G 3 IC R Planetary Reactor is a deposition system. The Aixtron AIX 2600 G 3 IC R Planetary Reactor belongs to the Aixtron AIX 2600 family.^[2]

Planetary reactors are deposition systems built around a chamber arrangement that promotes controlled film growth on wafers. Planetary reactor designs generally move wafer carriers relative to the gas flow and thermal environment to improve layer uniformity across the substrate and from wafer to wafer. Deposition systems of this class regulate precursor delivery, chamber atmosphere, and wafer temperature so that material forms on the wafer surface with the intended composition and thickness.

Deposition tools are used after wafer preparation and before later patterning, etch, implant, anneal, or metallization steps, depending on the layer being formed. Deposition reactors sit in the part of the process flow where engineered films are added to the wafer stack for subsequent device fabrication.

Deposition reactors are used for semiconductor film formation where the process requires controlled layer thickness, composition, and uniformity. Equipment in this class can support formation of functional layers used for active structures, buffer layers, cap layers, contact-related films, or protective coatings, depending on the qualified process chemistry.