Waferpedia

Tool family

ASM E 2000 Epitaxial Reactor

ASMDeposition1 entry
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Models in this family

  1. E 2000 Epitaxial Reactor

    The ASM E 2000 is a radiantly heated, single-wafer epitaxial reactor for chemical vapor deposition of doped or undoped silicon layers on wafers up to 200 mm (8 inches).

    Cited variants

    DesignationGenerationVintageChangesSource
    ASM E 2000 Epitaxial Reactor, 8 inch—2001Source states 8 inch wafer size and a 2001 vintage.Equipment inventory listing[1]
    ASM E 2000 Epitaxial Reactor, 6 inch——Source states 6 inch wafer size.Equipment inventory listing[2]
    ASM E 2000 (6 inch version)——Configured for 6 inch (150 mm) wafers, Right Hand system, WHC Robot Arm Dual Feed, different gas configuration (e.g., Aux4 GeH4 3500 sccm, Aux5 GeH4 500 sccm, HCl Low 1000 sccm)Equipment inventory listing[2]

Sources

Sources (2)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing