E 2000 Epitaxial Reactor

The ASM E 2000 is an epitaxial reactor used in semiconductor manufacturing for the deposition of epitaxial silicon layers on silicon wafers. The machine is a single-wafer, radiantly heated, gas-injected chemical vapor deposition system designed for wafers up to 200 mm (8 inch) in diameter. The system is configured as either an atmospheric, reduced pressure, or reduced-pressure-compatible system.^{[1][2][3][4][5][7]}

Epitaxial reactors are a class of chemical vapor deposition equipment that grow a crystalline layer on a wafer substrate, with the deposited layer continuing the crystal structure of the underlying wafer. The Epsilon 2000 series is a 200 mm epitaxial reactor platform from ASM.^[7]

The E 2000 uses radiant heating and gas injection to perform chemical vapor deposition of epitaxial layers on each wafer individually. A microprocessor-based system controller directs reactor functions and controls wafer transfers within the system.^[7]

Epitaxial reactors are positioned after the initial wafer preparation steps and before the deposition of other thin films. The epitaxial layer serves as the foundation for devices such as CMOS transistors, bipolar transistors, and power devices.

The E 2000 is used to deposit doped or undoped silicon epitaxial layers on wafers for advanced logic, memory, and power semiconductor devices. The system can grow a thickness of silicon evenly across the wafer surface as an extension of the wafer's crystalline structure.^[7]