ASM
E 2000 EPI Reactor
Plate 01ASM Epsilon E2000
Saxony Thermal GmbHWatch on YouTube
What it is
General reference — not yet source-verifiedAn epitaxial reactor is a deposition tool used to grow a crystalline silicon layer on a silicon wafer. Epitaxial deposition tools are part of the front end process flow and are used when device structures require a controlled silicon layer with defined electrical and structural properties. Epitaxial reactors are distinct from blanket dielectric or metal deposition tools because the deposited silicon is intended to follow the crystal structure of the substrate.
Where it fits in the process flow
General reference — not yet source-verifiedEpitaxial silicon deposition is used in front end wafer processing before many device formation steps that rely on the deposited silicon layer. Epitaxial growth commonly follows incoming wafer preparation and surface cleaning because the substrate surface condition strongly affects crystal growth. Epitaxial growth commonly precedes patterning, implantation, oxidation, and thermal processing steps that build active device regions within or on the grown layer.
What do the numbers mean?
Wafer handling1
Configuration & options16
- E 2 Upgraded to E 2000[1]
- MPI[1]
- Fully Function when removed from Fab[1]
- Refurbished in 2008[1]
- LPE Bubbler[1]
- Upgraded from Epsilon E2 to E2000[2]
- Right Handed Config[2]
- Atmospheric (ATM)[2]
- Service Console Integrated in Service Door[2]
- Main Power Distribution Cabinet including New Style SCRs[2]
Vintage & configurations
- 2008Refurbished[1]
Refurbished in 2008.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What distinguishes an epitaxial reactor from other deposition tools?General reference — not yet source-verified
An epitaxial reactor is intended to grow a crystalline layer that follows the lattice of the substrate. Other deposition classes may place material on the wafer without preserving single-crystal alignment.
Why is surface preparation important before epitaxial growth?General reference — not yet source-verified
The starting surface strongly affects interface cleanliness, nucleation behavior, and crystal quality. Machines of this class rely on a clean, well-prepared substrate so the new layer can grow with the intended structure and electrical properties.
Can machines of this class support doped and undoped layers?General reference — not yet source-verified
Yes. Such systems are commonly used for both intrinsic or lightly doped films and for layers grown with intentional in situ dopant incorporation, depending on the process recipe and device objective.
Not publicly documented
The following facts about the E 2000 EPI Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented variants, configuration options, or revision breakpoints of the E 2000 EPI Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the E 2000 EPI Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the E 2000 EPI Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the E 2000 EPI Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the E 2000 EPI Reactor are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Equipment inventory listing
- [2]Inventory photo
- [3]Inventory photo
Last updated Oct 16, 2026.
Compare with similar tools
View all →
The Applied Materials 0010-13622 is an RF match unit intended for PVD (Physical Vapor Deposition) described as a High Efficiency HE RF Match-Bias.
The Applied Materials 0020 12458 Part is an insulator, side match component for the Hdp-Cvd Ultima Plus system.