ASML
NXE 3400 B EUV
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The ASML TWINSCAN NXE:3400B is an extreme ultraviolet (EUV) lithography system. The ASML TWINSCAN NXE:3400B supports volume production at the 7 and 5 nm nodes. The ASML TWINSCAN NXE:3400B achieves a throughput of at least 125 wafers per hour at a dose of 20 mJ/cm².[1]
What it is
How it works
The NXE 3400 B is a step-and-scan system that employs Zeiss 4x reduction EUV optics. The projection optics have a numerical aperture of 0.33. The maximum scanned exposure field size is 26 x 33 mm. The illumination system supports advanced freeform pupil shaping. The operating sigma range is from 0.06 to 1.0.[1]
Wafer alignment is performed using SMASH alignment sensors that employ a phase grating alignment technique. The level sensor is based on a UV light source to minimize height measurement dependencies on wafer film stack variations. Overlay performance is specified at 1.4 nm dedicated chuck and 2.0 nm matched-machine.[1]
Where it fits in the process flow
The NXE 3400 B is designed to be complementary to ASML's ArFi (immersion) lithography technology. The system provides better resolution for the most demanding layers in a hybrid lithography strategy.[1]
Applications
The primary application of the NXE 3400 B is volume production of integrated circuits at the 7 nm and 5 nm technology nodes.[1]
What do the numbers mean?
Wafer handling3
Optics & imaging4
Configuration & options3
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
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Frequently asked questions
What is the throughput specification?
The throughput target is at least 125 wafers per hour under conditions of 20 mJ/cm² dose, 26x33 mm die size, and 96 shots per wafer.[1]
What is the overlay performance?
The dedicated chuck overlay is 1.4 nm and the matched-machine overlay is 2.0 nm.[1]
What is the numerical aperture of the projection optics?
The projection optics have a numerical aperture of 0.33.[1]
What type of optics does the NXE 3400 B use?
The system uses Zeiss 4x reduction EUV optics.[1]
Not publicly documented
The following facts about the NXE 3400 B EUV are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NXE 3400 B EUV are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the NXE 3400 B EUV are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the NXE 3400 B EUV are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the NXE 3400 B EUV are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the NXE 3400 B EUV is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (2)Every fact above is drawn from these public sources
- [1]asml.com — asml.comasml.com
- [2]Equipment inventory listing
Last updated Sep 26, 2026.
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