100 Nitride

The Oxford Plasmalab 100 is a parallel-plate PECVD system equipped with high- and low-frequency RF power supplies. The maximum high-frequency power is 500 W and the maximum low-frequency power is 500 W. The maximum substrate temperature is 400 °C. The system can deposit films ranging from tens of nanometers to several micrometers in thickness. Supported processes include silicon dioxide, silicon nitride, amorphous silicon, and TEOS-based silicon oxide. The maximum wafer diameter is 200 mm, and small pieces are supported.^[2]

PECVD systems introduce reactive gases into a vacuum chamber where an RF-generated plasma is struck. The plasma ionizes and dissociates the gases, creating highly reactive species that chemically combine on the substrate surface to form a solid thin film. The plasma provides energy to drive the deposition reactions, enabling significantly lower process temperatures compared to thermal CVD.

The Oxford Plasmalab 100 PECVD system is used for depositing silicon nitride as well as silicon dioxide, amorphous silicon, and TEOS-based silicon oxide. Typical applications include optical waveguides, silicon gate devices, and solar cell fabrication. The ability to deposit films at low temperatures makes it suitable for temperature-sensitive substrates.^[2]