Perkin Elmer
The Perkin Elmer 4400 is a sputtering system for physical vapor deposition. The Perkin Elmer 4400 supports wafer sizes up to 6 inches. The Perkin Elmer 4400 can be configured for DC and RF sputtering with RF bias capability.[1][2][3]

A sputtering system is a physical vapor deposition tool used to form thin films on wafer surfaces. A sputtering system transfers material from a target to a substrate in vacuum by ejecting atoms from the target and allowing them to condense on the wafer. A deposition tool of this class is used when a process flow needs a controlled metal or compound film rather than a grown or plated layer.
Physical vapor deposition tools operate by creating a vacuum environment, introducing process gas, sustaining a plasma, and removing material from a target so that the released species travel to the wafer and form a film. Sputtering tools commonly use direct current or radio frequency power depending on the target material and process needs. Sputtering tools may also apply substrate bias or preclean functions to influence film adhesion, density, and interface condition.
Deposition tools of this class sit in module builds where conductive, barrier, adhesion, seed, or other functional thin films must be added to patterned or unpatterned wafers. A sputtering step is commonly placed after wafer cleaning and before later lithography, etch, anneal, lift-off, or integration steps, depending on the device flow. A vacuum deposition step is chosen when the process requires a deposited film with controlled composition and thickness across the wafer surface.
Sputtering systems are used for thin-film formation in semiconductor, microsystem, and related wafer processes. Sputtering systems can deposit metals, alloys, and some compound films for interconnect, contact, electrode, barrier, adhesion, and similar functional layers. Sputtering systems can also support surface preparation by plasma-based preclean or etch functions before deposition.
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
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Film thickness is typically controlled by deposition rate and time, monitored with quartz crystal microbalances or optical interferometry, and verified with profilometry or ellipsometry.
Uniformity is influenced by source-to-substrate geometry, substrate rotation, gas flow distribution, and temperature gradients. Systems may include planetary motion or stationary fixtures to improve uniformity.
High to ultra-high vacuum is typically required to minimize contamination and ensure film purity. The specific level depends on the deposition method and material sensitivity.
Many deposition systems accept various substrate sizes and shapes through interchangeable pallets, holders, or chuck assemblies, though maximum dimensions are limited by chamber size.
The following facts about the 4400 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 4400 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 4400 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 4400 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 4400 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 4400 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 16, 2026.
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