PVD1000

The Tystar PVD1000 is a photo-enhanced chemical vapor deposition reactor used for thin-film deposition. The Tystar PVD1000 uses ultraviolet light as its energy source. The Tystar PVD1000 operates at deposition temperatures below 150°C. The Tystar PVD1000 can be configured in single-chamber or dual-chamber structures.^[2][1]

Photo-enhanced chemical vapor deposition systems form films by activating gaseous precursors with light rather than relying on a plasma as the primary activation method. Deposition tools in this class are used to create solid films on substrate surfaces inside a controlled process chamber. Chambered deposition systems generally balance gas delivery, energy input, substrate placement, and exhaust to sustain a repeatable surface reaction.

Deposition reactors are used in the part of device fabrication where insulating or functional thin films must be formed on prepared substrates. Such tools are typically used after substrate cleaning or prior film formation steps and before patterning, etch, anneal, or metallization steps that depend on the deposited layer. Deposition sequence placement is determined by the film's role as an insulator, barrier, passivation layer, or optical layer in the device stack.

The Tystar PVD1000 can deposit silicon dioxide, silicon nitride, silicon oxynitride, and other films. The Tystar PVD1000 is suitable for thin-film deposition on III-V substrates such as gallium arsenide and indium antimonide. The Tystar PVD1000 is intended for substrates that cannot tolerate higher deposition temperatures. The Tystar PVD1000 provides good step coverage in deposited films.^[2][1]